Homoepitaxial growth of 1ˉ02 β-Ga2O3 by halide vapor phase epitaxy

Abstract

We demonstrated halide vapor phase epitaxy of β-Ga2O3 on a native 1ˉ02 substrate, which should be scalable and useful for the formation of vertical fins and trenches with smooth (100)-faceted sidewalls using plasma-free microfabrication techniques, e.g., selective area growth and gas etching, for use in power device applications. No misoriented domains were detected in the epiwafer during x-ray pole figure measurements. The full width at half maximum values of the x-ray rocking curves of the epiwafer were virtually the same as those of the bare substrate. No domain boundaries were found using scanning transmission electron microscopy at the film/substrate interface. The growth rate was as high as 23 μm h−1, which was comparable to the rate for a (001) epilayer that was grown simultaneously.