Study of multilayered Cobalt Silicide Nanostructured Thin films prepared by Ion Beam Sputtering

Q3 Materials Science Current Nanomaterials Pub Date : 2022-04-17 DOI:10.2174/2405461507666220417003137
Karamjit Kaur, Anil Kumar
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引用次数: 0

Abstract

This work focuses on the different existing techniques for synthesis of nanomaterials, the selec-tion of potential process for preparation of Co/Si and Co/Si/Co such that material with optimum charac-teristics may be obtained The process of synthesis plays a crucial role in physical properties and associated phenom-ena acquired by them and hence is a deciding factor in various potential applications of the materials. To study the properties of multi-layered Cobalt Silicide Nanostructured Thin films prepared by Ion Beam Sputtering. The cobalt silicide is selected for synthesis using IBS technique owing to vast scope of its application in manufacturing microelectronic devices. The formation of nanostructured layers is confirmed through XRD and XRR patterns. The role of substrate thickness, interface quality and crystalline structure is very important in deciding properties of multilayers nano-structured thin films.
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离子束溅射制备多层硅化钴纳米薄膜的研究
这项工作的重点是合成纳米材料的不同现有技术,选择制备Co/Si和Co/Si/Co的潜在工艺,以获得具有最佳特性的材料。合成工艺对它们获得的物理性能和相关现象起着至关重要的作用,因此是材料各种潜在应用的决定因素。研究离子束溅射制备的多层硅化钴纳米结构薄膜的性能。由于硅化钴在微电子器件制造中的广泛应用,选择采用IBS技术合成硅化钴。通过XRD和XRR图谱证实了纳米结构层的形成。衬底厚度、界面质量和晶体结构在决定多层纳米结构薄膜性能方面起着非常重要的作用。
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来源期刊
Current Nanomaterials
Current Nanomaterials Materials Science-Materials Science (miscellaneous)
CiteScore
1.60
自引率
0.00%
发文量
53
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