Synthesis of MgO nanostructure thin films via electrodeposition method for gas sensing applications

N. Lal, Ajay Kumar, Kanhaiya Chawla, Sandeep Sharma, C. Lal
{"title":"Synthesis of MgO nanostructure thin films via electrodeposition method for gas sensing applications","authors":"N. Lal, Ajay Kumar, Kanhaiya Chawla, Sandeep Sharma, C. Lal","doi":"10.3329/bjsir.v58i2.64166","DOIUrl":null,"url":null,"abstract":"Magnesium oxide has long been intriguing due to several significant phenomena, including wide laser emission, spin electron reflectivity, and defect-induced magnetism. MgO nanostructures have a variety of applications, from spintronics to wastewater treatment, depending on their size and shape. Mg is sensitive material for hydrogen and forms MgH2, so we used Mg/MgO as a sensor to sense hydrogen gas in the present work. Magnesium oxide thin films were synthesized by electrodeposition technique using magnesium nitrate salt. XRD results suggested that the deposited thin films have a face-centered cubic structure. X-ray photoelectron spectroscopy was used to detect the elemental composition and chemical state with the general electronic structure of the sample. The morphology and growth of deposited nanostructure with elemental mapping of the thin film were investigated by SEM-EDS. The UV-visible analysis shows the calculated band gap for MgO thin filmwas 4.16 eV which is in the ultraviolet region. The I-V characteristics have been studied to find out the effect of hydrogenation on the synthesized MgO nanostructure and the sensitivity responseof about 31%. It is quiteevident that MgO nanostructure may be used for gas sensing applications (such as H2 gas).\nBangladesh J. Sci. Ind. Res. 58(2), 119-128, 2023","PeriodicalId":8735,"journal":{"name":"Bangladesh Journal of Scientific and Industrial Research","volume":" ","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2023-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Bangladesh Journal of Scientific and Industrial Research","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.3329/bjsir.v58i2.64166","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

Magnesium oxide has long been intriguing due to several significant phenomena, including wide laser emission, spin electron reflectivity, and defect-induced magnetism. MgO nanostructures have a variety of applications, from spintronics to wastewater treatment, depending on their size and shape. Mg is sensitive material for hydrogen and forms MgH2, so we used Mg/MgO as a sensor to sense hydrogen gas in the present work. Magnesium oxide thin films were synthesized by electrodeposition technique using magnesium nitrate salt. XRD results suggested that the deposited thin films have a face-centered cubic structure. X-ray photoelectron spectroscopy was used to detect the elemental composition and chemical state with the general electronic structure of the sample. The morphology and growth of deposited nanostructure with elemental mapping of the thin film were investigated by SEM-EDS. The UV-visible analysis shows the calculated band gap for MgO thin filmwas 4.16 eV which is in the ultraviolet region. The I-V characteristics have been studied to find out the effect of hydrogenation on the synthesized MgO nanostructure and the sensitivity responseof about 31%. It is quiteevident that MgO nanostructure may be used for gas sensing applications (such as H2 gas). Bangladesh J. Sci. Ind. Res. 58(2), 119-128, 2023
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电沉积法制备气敏用MgO纳米结构薄膜
由于氧化镁的几个重要现象,包括宽激光发射、自旋电子反射率和缺陷诱导磁性,氧化镁一直很有趣。MgO纳米结构有各种各样的应用,从自旋电子学到废水处理,这取决于它们的大小和形状。Mg是对氢敏感的物质,会形成MgH2,所以我们在本工作中使用Mg/MgO作为传感器来感知氢气。以硝酸镁盐为原料,采用电沉积技术合成了氧化镁薄膜。XRD结果表明,所制备的薄膜具有面心立方结构。采用x射线光电子能谱法对样品的元素组成、化学状态和一般电子结构进行了检测。利用扫描电镜能谱仪(SEM-EDS)对沉积的纳米结构的形貌和生长进行了研究。紫外可见分析表明,计算得到的MgO薄膜带隙为4.16 eV,处于紫外区。通过I-V特性研究了加氢对合成的MgO纳米结构的影响,并获得了约31%的灵敏度响应。很明显,MgO纳米结构可以用于气敏应用(如H2气体)。[j]。修订后58(2),119-128,2023
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审稿时长
4 weeks
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