一种新型a-IGZO TFT集成栅极驱动电路设计

IF 0.7 4区物理与天体物理 Q3 CRYSTALLOGRAPHY 液晶与显示 Pub Date : 2018-12-25 DOI:10.3788/YJYXS20183312.0996

徐宏霞, XU Hong-xia, 邹忠飞, Zou Zong-fei, 董承远, Dong Cheng-yuan

引用次数: 0

Abstract

在传统集成栅驱动电路中采用非晶InGaZnO薄膜晶体管（a-IGZO TFT）后会造成信赖性的降低，经过分析确定原因为驱动TFT阈值电压漂移。本文提出了一种改进的集成栅驱动电路，通过对驱动TFT栅节点电压的稳定控制，获得了较大的驱动TFT阈值电压漂移冗余度（从原来的不到±-3 V扩大到±-9 V），克服了a-IGZO TFT阈值电压漂移所造成的电路失效，稳定了集成栅驱动电路并延长了液晶显示器面板的寿命。

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一种新型a-IGZO TFT集成栅极驱动电路设计

The use of amorphous InGaZnO thin film transistors (a-IGZO TFTs) in traditional integrated gate drive circuits can lead to a decrease in reliability. After analysis, it is determined that the reason is the threshold voltage drift of the driving TFT. This article proposes an improved integrated gate driver circuit, which achieves significant redundancy in driving TFT threshold voltage drift (from less than ± -3 V to ± -9 V) by stabilizing the voltage of the driving TFT gate node. It overcomes the circuit failure caused by a-IGZO TFT threshold voltage drift, stabilizes the integrated gate driver circuit, and extends the lifespan of the LCD panel.

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