Pub Date : 2020-05-05DOI: 10.3788/yjyxs20203505.04222
王光华 Wang Guang-hua, 段良飞 Duan Liang-fei, 郑晓东 Zheng Xiao-dong, 段羽 Duan Yu, 高思博 Gao Si-bo, 张. Z. Jie, 杨丽丽 Yang Li-li, 杨炜平 Yang Wei-pin, 陈雪梅 Chen Xue-mei, 王. W. Can, 武艳鸣 Wu Yan-ming, 周芳 Zhon Fang, 施梅 Shi Mei
In order to analyze the effect of different thickness of C60 on optical and electrical properties of top-emitting OLED, in experiment, the transmittance of ETL/EIL/Mg:Ag/matching layers were numerically calculated and two top OLED with common cathode configurations were fabricated. The optical and electrical properties of OLED devices prepared with different thickness of C60 refractive index matching layers were analyzed. The results showed, the complex films with different C60 thickness have different transmittance, the complex films have high transmittance in wide range of wavelengths when C60 film thickness is 30~40 nm, the CIEx and CIEy values of transmittance spectra are extremely near to the equal energy (0.33, 0.33). In addition, it can be found that the electroluminescence spectra and the chromaticity coordinates of OLED devices are also heavily related to the thickness of C60 refractive index matching layers, which is consistent with the numerical results of transmission spectrum of multilayer (ETL/EIL/Mg:Ag/C60) at different thickness of C60 thin films and indicate that the luminous brightness and the color coordinates of top-emitting white light devices can be adjusted by different thickness of C60 refractive index matching layer to achieve white light emission close to equal energy.
{"title":"Effect of refractive index matching layers on optical and electrical properties of top-emitting organic white light emitting devices","authors":"王光华 Wang Guang-hua, 段良飞 Duan Liang-fei, 郑晓东 Zheng Xiao-dong, 段羽 Duan Yu, 高思博 Gao Si-bo, 张. Z. Jie, 杨丽丽 Yang Li-li, 杨炜平 Yang Wei-pin, 陈雪梅 Chen Xue-mei, 王. W. Can, 武艳鸣 Wu Yan-ming, 周芳 Zhon Fang, 施梅 Shi Mei","doi":"10.3788/yjyxs20203505.04222","DOIUrl":"https://doi.org/10.3788/yjyxs20203505.04222","url":null,"abstract":"In order to analyze the effect of different thickness of C60 on optical and electrical properties of top-emitting OLED, in experiment, the transmittance of ETL/EIL/Mg:Ag/matching layers were numerically calculated and two top OLED with common cathode configurations were fabricated. The optical and electrical properties of OLED devices prepared with different thickness of C60 refractive index matching layers were analyzed. The results showed, the complex films with different C60 thickness have different transmittance, the complex films have high transmittance in wide range of wavelengths when C60 film thickness is 30~40 nm, the CIEx and CIEy values of transmittance spectra are extremely near to the equal energy (0.33, 0.33). In addition, it can be found that the electroluminescence spectra and the chromaticity coordinates of OLED devices are also heavily related to the thickness of C60 refractive index matching layers, which is consistent with the numerical results of transmission spectrum of multilayer (ETL/EIL/Mg:Ag/C60) at different thickness of C60 thin films and indicate that the luminous brightness and the color coordinates of top-emitting white light devices can be adjusted by different thickness of C60 refractive index matching layer to achieve white light emission close to equal energy.","PeriodicalId":10128,"journal":{"name":"液晶与显示","volume":"35 1","pages":"422-429"},"PeriodicalIF":0.6,"publicationDate":"2020-05-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"42513417","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Properties of MoOx thin films prepared by magnetron sputtering","authors":"王效坤, Wang Xiao-kun, 房伟华, Fang Wei-hua, 刘飞, Liu Fei","doi":"10.3788/YJYXS20203503.0211","DOIUrl":"https://doi.org/10.3788/YJYXS20203503.0211","url":null,"abstract":"MoOx材料因其较低的反射率，在窄边框液晶显示技术等领域是一种理想的材料。本文利用磁控溅射法在玻璃基板上制备MoOx薄膜，并在MoOx薄膜上沉积不同的金属层，采用不同的方法研究MoOx薄膜及其搭配金属层的特性。测试结果表明：MoOx和玻璃基板的粘附性较好，无须打底膜可在玻璃基板上直接沉积；MoOx和Al及Cu的粘附效果优于Mo及MTD等Mo合金；MoOx薄膜的方块电阻值较大，搭配金属层时可忽略不计；MoOx厚度对搭配金属膜的反射率及色差影响很大，而金属层厚度影响较小。对于采用MoOx作低反材料的工艺，可以根据MoOx材料的特性选择搭配不同的金属层，在满足反射率等要求的基础上，可通过调整MoOx层厚度来调整产品的色差，以满足客户的颜色喜好需求。","PeriodicalId":10128,"journal":{"name":"液晶与显示","volume":"35 1","pages":"211-218"},"PeriodicalIF":0.6,"publicationDate":"2020-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"46023782","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-02-05DOI: 10.3788/yjyxs20203502.0128
辛兰, Xin Lan, 杨军, Yang Jun, 李哲, Li Zhe, 栗鹏, Li Peng, 陈东川, Chen Dong-chuan, 李晓吉, LI Xiao-ji, 胡竞勇, HU Jing-yong, 朱维, Zhu Wei, 龚鹏程, Gong Peng-cheng, 朴正淏, Piao Zheng-hao, 闵泰烨, Min Tai-ye
{"title":"Prevention of uneven color for TFT-LCD TN curve panel","authors":"辛兰, Xin Lan, 杨军, Yang Jun, 李哲, Li Zhe, 栗鹏, Li Peng, 陈东川, Chen Dong-chuan, 李晓吉, LI Xiao-ji, 胡竞勇, HU Jing-yong, 朱维, Zhu Wei, 龚鹏程, Gong Peng-cheng, 朴正淏, Piao Zheng-hao, 闵泰烨, Min Tai-ye","doi":"10.3788/yjyxs20203502.0128","DOIUrl":"https://doi.org/10.3788/yjyxs20203502.0128","url":null,"abstract":"薄膜晶体管液晶显示器（TFT-LCD）扭曲向列型（TN）液晶曲面显示器搭配宽视角偏光片暗态时会发生色不均现象，推测色不均现象的发生机理为：曲面状态时，玻璃基板受应力发生形变，面板中应力不均，加之液晶双折射，暗态时上视角观察显示屏上下两侧边缘发蓝。本文模拟了不同改善措施对色不均现象的影响，同时对有改善的模拟结果进行了实验测试。测试结果表明，可以通过两种方式改善色不均现象：第一种是增加暗态亮度，掩盖暗态时色不均现象，如调整电路、偏光片吸收轴角度等。实验结果表明调整电路使显示器暗态亮度从0.18 cd/m2提升至0.25 cd/m2，色不均面积由显示器面积的30%减小至10%，吸收轴角度从135°调整至134.5°，色不均面积减小至10%，但电路调整使显示器响应时间增加2.5倍，吸收轴角度调整0.5°会使对比度下降20%，对产品性能均有不利影响；第二种是改善曲面状态下显示屏内部应力均一性，如增加液晶盒盒厚、高温老化、降低显示器玻璃基板厚度等。实验结果表明：降低玻璃厚度至0.2 mm以及高温60℃老化72 h均能使色不均现象消失，且对产品性能无不利影响。","PeriodicalId":10128,"journal":{"name":"液晶与显示","volume":"35 1","pages":"128-135"},"PeriodicalIF":0.6,"publicationDate":"2020-02-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"48596379","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
With the development of display technology, the thickness required for Ti/Al/Ti materials is becoming thicker and the wiring is becoming narrower. At present, the conventional design in LTPS display technology is to use inorganic films on Ti/Al/Ti material substrates. In the new design of flexible OLED display technology, Ti/Al/Ti substrates gradually use organic films (polyimide, etc.), and the challenges faced by Ti/Al/Ti dry etching process are becoming increasingly significant. This article mainly studies the effect of BCl3 gas on the morphology of Ti/Al/Ti side profile and the etching rate of photoresist in conventional Ti/Al/Ti dry etching process. The experimental results show that as the BCl3 gas flow rate increases, the thickness of Ti/Al/Ti side protective film becomes thinner and the etching rate of PR adhesive decreases. The research results of this article facilitate a better response to the new process of Ti/Al/Ti dry etching of organic films as substrates.
The use of amorphous InGaZnO thin film transistors (a-IGZO TFTs) in traditional integrated gate drive circuits can lead to a decrease in reliability. After analysis, it is determined that the reason is the threshold voltage drift of the driving TFT. This article proposes an improved integrated gate driver circuit, which achieves significant redundancy in driving TFT threshold voltage drift (from less than ± -3 V to ± -9 V) by stabilizing the voltage of the driving TFT gate node. It overcomes the circuit failure caused by a-IGZO TFT threshold voltage drift, stabilizes the integrated gate driver circuit, and extends the lifespan of the LCD panel.
Pub Date : 2018-11-05DOI: 10.3788/yjyxs20183311.0925
Xiao Wang, S. Ge, Shan Li
Back channel etched (BCE) amorphous InGaZnO (a-IGZO) can be fabricated with fewer photolithography masks and achieve smaller parasitic capacitance. However, the back channel of the BCE a-IGZO TFT is vulnerable to acid and plasma damage, which leads to problems of TFT uniformity and stability. In particular, with the introduction of gate driver on array (GOA) technology, it is increasingly urgent to improve the electrical uniformity and stability of TFTs. Therefore, it is an urgent requirement for technology and market to develop high reliability BCE IGZO TFTs. The electrical characteristic of the BCE configuration based a-IGZO TFTs were studied. The passivation layer, the selection of color filter material and design of GOA TFT structure were modified for lessening the influence of H2O molecules adsorbing on the back channel of the BCE-structure. The negative and positive bias temperature stress(N/PBTS) results revealed that the optimized GOA TFTs exhibited good device reliability-the Vth shift under gate voltage of -30 V at 80℃ is less than 1 V for 2 000 s. Finally, a high performance 215.9 mm(85 in) 8K4K 120 Hz GOA LCD was demonstrated.
{"title":"Fabrication of high-reliability Cu BCE-structure IGZO TFTs","authors":"Xiao Wang, S. Ge, Shan Li","doi":"10.3788/yjyxs20183311.0925","DOIUrl":"https://doi.org/10.3788/yjyxs20183311.0925","url":null,"abstract":"Back channel etched (BCE) amorphous InGaZnO (a-IGZO) can be fabricated with fewer photolithography masks and achieve smaller parasitic capacitance. However, the back channel of the BCE a-IGZO TFT is vulnerable to acid and plasma damage, which leads to problems of TFT uniformity and stability. In particular, with the introduction of gate driver on array (GOA) technology, it is increasingly urgent to improve the electrical uniformity and stability of TFTs. Therefore, it is an urgent requirement for technology and market to develop high reliability BCE IGZO TFTs. The electrical characteristic of the BCE configuration based a-IGZO TFTs were studied. The passivation layer, the selection of color filter material and design of GOA TFT structure were modified for lessening the influence of H2O molecules adsorbing on the back channel of the BCE-structure. The negative and positive bias temperature stress(N/PBTS) results revealed that the optimized GOA TFTs exhibited good device reliability-the Vth shift under gate voltage of -30 V at 80℃ is less than 1 V for 2 000 s. Finally, a high performance 215.9 mm(85 in) 8K4K 120 Hz GOA LCD was demonstrated.","PeriodicalId":10128,"journal":{"name":"液晶与显示","volume":"33 1","pages":"925-930"},"PeriodicalIF":0.6,"publicationDate":"2018-11-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"44427557","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Based on the optical Jones matrix theory, the grating diffraction characteristics of Sm2O3 doped nematic liquid crystal TEB30A in a weak magnetic field were studied. The results indicate that natural light passing through the appropriate proportion of Sm2O3/TEB30A sample in a weak magnetic field will generate diffraction fringes in the far field, and the diffraction fringes will dynamically change with the increase of external magnetic field intensity. The generation of diffraction fringes is due to the doping of an appropriate amount of Sm2O3, which leads to the anisotropy of the refractive index of the nematic liquid crystal TEB30A Δ N exhibits a periodic distribution along the direction of the external magnetic field, forming a liquid crystal grating; When the intensity of the external magnetic field changes, the distribution of Sm2O3 particles and liquid crystal molecules in the external magnetic field will also change, resulting in Δ The period of n distribution along the external magnetic field changes, causing a change in the constant of the liquid crystal grating. Therefore, the diffraction fringes exhibit a dynamic change effect. The simulation results show that when the external magnetic field intensity increases from 0.464 9 T to 0.518 5 T, the liquid crystal grating constant decreases from 0.5 cm to 0.4 cm. This technology research method will greatly reduce the cost of liquid crystal gratings, and at the same time, the weak magnetic field environment also provides a safe usage environment for users.
{"title":"Diffraction characteristics of nematic liquid crystal TEB30A grating doped with Sm2O3","authors":"刘桂香, Liu Gui-xing, 林海, Lin Hai, 庞伟秀, Pang Wei-xiu, 王雁冰, Wang Yan-bing","doi":"10.3788/yjyxs20183310.0851","DOIUrl":"https://doi.org/10.3788/yjyxs20183310.0851","url":null,"abstract":"基于光学琼斯矩阵理论，研究掺杂Sm2O3的向列相液晶TEB30A在弱磁场中的光栅衍射特性。结果表明，自然光通过处在弱磁场中的适量配比的Sm2O3/TEB30A样品后，会在远场产生衍射条纹，且衍射条纹会随外磁场强度的增加而出现动态的变化。产生衍射条纹是由于适量的Sm2O3的掺杂，使得向列相液晶TEB30A的折射率各向异性Δn沿外磁场方向呈现周期分布，形成了液晶光栅；当外磁场强度发生变化时，处在外磁场中的Sm2O3粒子和液晶分子的分布会随之发生变化，导致Δn沿外磁场分布的周期发生变化，从而引起液晶光栅常数发生变化，因此，衍射条纹呈现出动态变化的效应。模拟结果表明，当外磁场强度由0.464 9 T增加到0.518 5 T时，液晶光栅常数由0.5 cm降到0.4 cm。这一技术研究方法将大大降低液晶光栅的成本，同时，弱磁场环境也为使用者提供了一种安全的使用环境。","PeriodicalId":10128,"journal":{"name":"液晶与显示","volume":"33 1","pages":"851-856"},"PeriodicalIF":0.6,"publicationDate":"2018-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49646134","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-05-25DOI: 10.3788/yjyxs20183305.0418
马天娇 Ma Tian-jiao, 韩广良 Han Guang-liang, 孙海江 Sun Hai-jiang
Since the height of aerial image shot is much lower than the height of satellite image shot, this may lead to the differences of the projection sizes and directions between every shooting location, which will result in serious picture distortion in most cases. In addition, the degree of distortion of the image edge region is much more serious than that in the center region, a distortion correction method based on Lagrange interpolation of polar coordinates has been proposed by this paper. We use this method to interpolate the single pixel in polar coordinates system. The pixel coordinate expression will be reconverted from polar coordinates to Cartesian coordinates after we corrected the pixel according the consequence of interpolation. And finally this method will be used to correct distortion pixel-by-pixel throughout the aerial image. The experiment results show that the corrected aerial image distortion does not exceed 3%, which proves that this algorithm can not only correct distortion image effectively, but also has a wide applicability compared with the traditional distortion correction methods, such as making use of the Direct Linear Transformation to obtain the distortion matrix.
{"title":"Aerial image distortion correction algorithm based on polar coordinate Lagrange interpolation","authors":"马天娇 Ma Tian-jiao, 韩广良 Han Guang-liang, 孙海江 Sun Hai-jiang","doi":"10.3788/yjyxs20183305.0418","DOIUrl":"https://doi.org/10.3788/yjyxs20183305.0418","url":null,"abstract":"Since the height of aerial image shot is much lower than the height of satellite image shot, this may lead to the differences of the projection sizes and directions between every shooting location, which will result in serious picture distortion in most cases. In addition, the degree of distortion of the image edge region is much more serious than that in the center region, a distortion correction method based on Lagrange interpolation of polar coordinates has been proposed by this paper. We use this method to interpolate the single pixel in polar coordinates system. The pixel coordinate expression will be reconverted from polar coordinates to Cartesian coordinates after we corrected the pixel according the consequence of interpolation. And finally this method will be used to correct distortion pixel-by-pixel throughout the aerial image. The experiment results show that the corrected aerial image distortion does not exceed 3%, which proves that this algorithm can not only correct distortion image effectively, but also has a wide applicability compared with the traditional distortion correction methods, such as making use of the Direct Linear Transformation to obtain the distortion matrix.","PeriodicalId":10128,"journal":{"name":"液晶与显示","volume":"33 1","pages":"418-426"},"PeriodicalIF":0.6,"publicationDate":"2018-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"44898598","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The commonly used offline LED display screen control method in the current market is mainly wired communication. With the rapid development of mobile communication technology, 4G has entered the popularization stage. Compared with traditional wired communication methods, 4G technology is not limited by location and has significant advantages in engineering costs, environmental adaptability, network scalability, and equipment maintenance. In order to solve the problem that wired LED display screens cannot be installed due to geographical location, communication distance, and installation method limitations in engineering, this article designs and implements an offline LED control system based on 4G-LTE. The system is based on an i. MX6Q microcontroller, a 4G all network communication module as the wireless communication foundation, and an FPGA chip as the LED display screen scanning control unit. It implements a new offline control system architecture of ARM+FPGA+4G, and designs upper computer software based on TCP/IP network communication protocol. The offline control system can achieve wireless transmission of high-quality images and videos through a 4G network, meeting the display requirements of 256 level grayscale full color LED offline screen graphics and videos. After testing, the system can operate stably and efficiently, with strong practicality and high transmission rate.
{"title":"Design of off-line led control system based on 4G-LTE","authors":"唐娜娜, Tang Na-na, 郑喜凤, Zheng Xifeng, 武金忠, Wu Jinzhong, 陈浩, Chen Hao, 李宏侠, Liang Hongxia","doi":"10.3788/yjyxs20183301.0055","DOIUrl":"https://doi.org/10.3788/yjyxs20183301.0055","url":null,"abstract":"目前市场上常用的脱机LED显示屏控制方式主要为有线通信。随着移动通信技术的快速发展，4G开始进入普及阶段。与传统有线通信方式相比，4G技术不受地点的限制，在工程成本、环境适应性、网络扩展性及设备维护等方面有明显优势。为了解决工程上有线LED显示屏受地理位置、通信距离、安装方式限制无法安装的问题，本文设计实现了基于4G-LTE的脱机LED控制系统。系统以i.MX6Q微控制器为核心，4G全网通模块为无线通信基础，FPGA芯片为LED显示屏扫描控制单元，实现了ARM+FPGA+4G的全新脱机控制系统架构，并设计了基于TCP/IP网络通信协议的上位机软件。该脱机控制系统通过4G网络可以实现高质量图像、视频的无线传输，满足256级灰度全彩色LED脱机屏图文、视频的显示要求。经过测试，系统能够稳定高效运行，具有较强的实用性和较高的传输速率。","PeriodicalId":10128,"journal":{"name":"液晶与显示","volume":"33 1","pages":"55-60"},"PeriodicalIF":0.6,"publicationDate":"2018-01-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49144412","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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