{"title":"Photonics with Thin Film Lithium Niobate","authors":"Siyuan Yu","doi":"10.1117/1.ap.4.3.030101","DOIUrl":null,"url":null,"abstract":"Thin film lithium niobate (TFLN) has the potential to revolutionize photonic integrated circuit (PIC) technology, due to its ability to combine low optical loss, tight optical confinement, and active optical func-tions. In particular, the readily available electro-optic effect and 2 nd order nonlinear effect afford more unique functionalities to TFLN compared to other, more mature, PIC materials, including silicon (Si), silicon ni-tride ( SiN x ), silicon dioxide ( SiO 2 ) and in-dium phosphide (InP), while the refractive index contrast between TFLN waveguide and typical cladding materials such as SiO 2 is sufficiently large to sup-port relatively tight bending, leading to small component sizes. (https:// article fo-cused on the nonlinear photonics in TFLN to enable","PeriodicalId":33241,"journal":{"name":"Advanced Photonics","volume":" ","pages":""},"PeriodicalIF":20.6000,"publicationDate":"2022-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advanced Photonics","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1117/1.ap.4.3.030101","RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"OPTICS","Score":null,"Total":0}
引用次数: 0
Abstract
Thin film lithium niobate (TFLN) has the potential to revolutionize photonic integrated circuit (PIC) technology, due to its ability to combine low optical loss, tight optical confinement, and active optical func-tions. In particular, the readily available electro-optic effect and 2 nd order nonlinear effect afford more unique functionalities to TFLN compared to other, more mature, PIC materials, including silicon (Si), silicon ni-tride ( SiN x ), silicon dioxide ( SiO 2 ) and in-dium phosphide (InP), while the refractive index contrast between TFLN waveguide and typical cladding materials such as SiO 2 is sufficiently large to sup-port relatively tight bending, leading to small component sizes. (https:// article fo-cused on the nonlinear photonics in TFLN to enable
薄膜铌酸锂（TFLN）具有结合低光学损耗、紧密光学约束和主动光学功能的能力，有可能彻底改变光子集成电路（PIC）技术。特别地，与其他更成熟的PIC材料（包括硅（Si）、氮化硅（SiNx）、二氧化硅（SiO2）和磷化铟（InP））相比，容易获得的电光效应和二阶非线性效应为TFLN提供了更独特的功能，而TFLN波导与诸如SiO2的典型包层材料之间的折射率对比度足够大以支持相对紧密的弯曲从而导致小的部件尺寸。（https://article focused on the nonlinear photonics in TFLN to enable
期刊介绍：
Advanced Photonics is a highly selective, open-access, international journal that publishes innovative research in all areas of optics and photonics, including fundamental and applied research. The journal publishes top-quality original papers, letters, and review articles, reflecting significant advances and breakthroughs in theoretical and experimental research and novel applications with considerable potential.
The journal seeks high-quality, high-impact articles across the entire spectrum of optics, photonics, and related fields with specific emphasis on the following acceptance criteria:
-New concepts in terms of fundamental research with great impact and significance
-State-of-the-art technologies in terms of novel methods for important applications
-Reviews of recent major advances and discoveries and state-of-the-art benchmarking.
The journal also publishes news and commentaries highlighting scientific and technological discoveries, breakthroughs, and achievements in optics, photonics, and related fields.
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