Simulation of Germanium-on-Nothing cavity’s morphological transformation using deep learning

IF 4.7 Q2 NANOSCIENCE & NANOTECHNOLOGY Micro and Nano Systems Letters Pub Date : 2022-12-08 DOI:10.1186/s40486-022-00164-5
Jaewoo Jeong, Taeyeong Kim, Jungchul Lee
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Abstract

Unique self-assembled germanium structures known as Germanium-on-Nothing (GON), which are fabricated via annealing, have buried multiscale cavities with different morphologies. Due to their unique sub-surface morphologies, GON structures are utilized in various applications including optoelectronics, micro-/nanoelectronics, and precision sensors. Each application requires different cavity shapes, and a simulation tool is able to determine the required annealing duration for a given shape. However, a theoretical simulation inevitably requires simplifications which limit its accuracy. Herein, to resolve such dependence on simplification, we introduce a deep learning-based method for simulating the transformation of sub-surface morhpology of GON over annealing. Namely, a deep learning model is trained to predict GON’s morphological transformation from 4 cross-sectional images acquired at different annealing times. Compared to conventional simulation schemes, our proposed deep learning-based simulation method is not only computationally efficient (\(\sim 10\) min) but also physically accurate with its use of empirical data.

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基于深度学习的锗空腔形态变换模拟
通过退火制备的独特的自组装锗结构,称为锗-on- nothing (GON),具有埋藏不同形态的多尺度空腔。由于其独特的亚表面形态,GON结构被用于各种应用,包括光电子学,微/纳米电子学和精密传感器。每个应用需要不同的空腔形状,模拟工具能够确定给定形状所需的退火持续时间。然而,理论模拟不可避免地需要简化,从而限制了其准确性。在此,为了解决这种对简化的依赖,我们引入了一种基于深度学习的方法来模拟退火过程中GON的次表面形态的转变。即,训练一个深度学习模型来预测在不同退火时间下获得的4个横截面图像的GON的形态变换。与传统的模拟方案相比,我们提出的基于深度学习的模拟方法不仅计算效率高(\(\sim 10\) min),而且由于使用经验数据而在物理上准确。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Micro and Nano Systems Letters
Micro and Nano Systems Letters Engineering-Biomedical Engineering
CiteScore
10.60
自引率
5.60%
发文量
16
审稿时长
13 weeks
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