Study of the impact of quantum confinement energy on the energy gap and activation energy of indium phosphide (InP) and indium arsenide (InAs)

IF 1 4区 材料科学 Q4 MATERIALS SCIENCE, MULTIDISCIPLINARY Digest Journal of Nanomaterials and Biostructures Pub Date : 2023-07-02 DOI:10.15251/djnb.2023.182.703
A. H. Asal, S. N. T. Al-Rashid
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Abstract

This study examines how quantum confinement energy affects the electrical characteristics represented by the energy gap. and the activation energy of indium arsenide (InAs) and indium phosphide (Inp) was studied using a computer program (MATLAB) version (R2012a), which is based on the characteristic matrix theory and Bruce's model, we found that the energy gap increases with the quantum confinement energy at small nanoscales, as well as the activation energy due to the quantum confinement effect, but these electrical properties decrease with the quantum confinement energy at large nanoscales.
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量子约束能对磷化铟(InP)和砷化铟(InAs)能隙和活化能影响的研究
这项研究考察了量子约束能量如何影响由能隙表示的电学特性。并使用基于特征矩阵理论和Bruce模型的计算机程序(MATLAB)版本(R2012a)研究了砷化铟(InAs)和磷化铟(Inp)的活化能,我们发现在小纳米尺度上,能隙随着量子约束能的增加而增加,以及由于量子约束效应引起的活化能,但在大纳米尺度上,这些电学性质随着量子约束能量的增加而降低。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Digest Journal of Nanomaterials and Biostructures
Digest Journal of Nanomaterials and Biostructures 工程技术-材料科学:综合
CiteScore
1.50
自引率
22.20%
发文量
116
审稿时长
4.3 months
期刊介绍: Under the aegis of the Academy of Romanian Scientists Edited by: -Virtual Institute of Physics operated by Virtual Company of Physics.
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