{"title":"Modelling of transport properties of graphene field-effect transistor for sensor application","authors":"Geoffrey Ijeomah, F. Samsuri, M. Zawawi","doi":"10.1504/ijbnn.2020.10029068","DOIUrl":null,"url":null,"abstract":"A dual-gated ultra-thin graphene field effect transistor (GFET) suitable for electronic sensing application is modelled. The applied simulation approach reproduces accurately the transport properties of the GFET characteristics and enables investigation of the influence of the different physical, biological and chemical factors. The simulation readouts and additional charges in the system are interpreted in the form of current-voltage characteristics and shift in Dirac peaks. These features could be extracted to predict the sensing mechanism of the GFET.","PeriodicalId":89939,"journal":{"name":"International journal of biomedical nanoscience and nanotechnology","volume":" ","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2020-05-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International journal of biomedical nanoscience and nanotechnology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1504/ijbnn.2020.10029068","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
A dual-gated ultra-thin graphene field effect transistor (GFET) suitable for electronic sensing application is modelled. The applied simulation approach reproduces accurately the transport properties of the GFET characteristics and enables investigation of the influence of the different physical, biological and chemical factors. The simulation readouts and additional charges in the system are interpreted in the form of current-voltage characteristics and shift in Dirac peaks. These features could be extracted to predict the sensing mechanism of the GFET.
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