Optical properties of 2D pristine and doped Janus WSSe using first principles study

IF 0.3 Q4 MATERIALS SCIENCE, MULTIDISCIPLINARY Nanomaterials and Energy Pub Date : 2022-12-01 DOI:10.1680/jnaen.22.00028
M. Srivastava, B. P. Pandey, N. Mishra, D. Kumar, V. Tomar, Santosh Kumar
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引用次数: 2

Abstract

The paper explores electronic (optical) properties of pristine and p-type doped (B, Al, Ga) WSSe monolayer (ML) through first principle calculation. In the electronic properties, total density of states (TDOS) and band gap are investigated which confirms the magnetic attributes induced after doping of p-type (B, Al, Ga) materials in the system. Further, the optical properties are extracted for the studied system in terms of dielectric function (real (ε1), imaginary (ε2)), absorption index (α) and refractive index (n) systematically. The real part of ε1 is showing negative values which means to opaque for light through that region. The imaginary part of ε2 shows that B-doped WSSe ML is a probable aspirant with higher light absorbing capacity along with the absorption index shows the peaks align in the ultraviolet (UV) range for both pristine and p-type doped system dominating in the absorption spectrum. The refractive index (n) is investigated, and the peaks located in the UV region. Again, the B-doped system has the maximum value and is in trend with the reported results. Thus, the optical properties study of p-type doped system concludes that B-doped system is more suitable for designing of optoelectronic devices.
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使用第一性原理研究2D原始和掺杂Janus WSSe的光学性质
本文通过第一性原理计算,探讨了原始和p型掺杂(B,Al,Ga)WSSe单层(ML)的电子(光学)性质。在电子性质方面,研究了总态密度(TDOS)和带隙,证实了在系统中掺杂p型(B,Al,Ga)材料后产生的磁性属性。此外,系统地提取了所研究系统的介电函数(实(ε1)、虚(ε2))、吸收指数(α)和折射率(n)的光学性质。ε1的实部显示负值,这意味着通过该区域的光是不透明的。ε2的虚部表明,B掺杂的WSSe ML可能是一种具有更高光吸收能力的促进剂。吸收指数表明,对于在吸收光谱中占主导地位的原始和p型掺杂体系,峰值在紫外(UV)范围内排列。研究了折射率(n),并且峰位于UV区域。同样,B掺杂系统具有最大值,并且与所报道的结果呈趋势。因此,对p型掺杂体系的光学性质研究表明,B型掺杂体系更适合于光电子器件的设计。
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来源期刊
Nanomaterials and Energy
Nanomaterials and Energy MATERIALS SCIENCE, MULTIDISCIPLINARY-
CiteScore
2.10
自引率
0.00%
发文量
2
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