Dong Hyun Seo, Ju Won Kim, Jin-Hoo Seong, Hyo-Chang Lee, Sang-il Kim, TaeWan Kim
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引用次数: 0
Abstract
The mechanically exfoliated ultrathin 3R α-In2Se3 nanosheets were transferred onto a SiO2/Si substrate. Using atomic force microscopy, it was confirmed that the transferred α-In2Se3 transferred had a thickness of 15–120 nm. The thickness-dependence of Raman peaks of \({E}^{2}\), \({A}_{1}^{1}\), \({E}^{4}\), and \({A}_{1}^{2}\) was observed from the Raman spectra. Moreover, the measured photoluminescence peak values in the range of 869–895 nm indicate a blue shift as the thickness decreases. The field-effect transistor based on α-In2Se3 exhibited an n-type semiconductor behavior. From the transfer curve at gate voltage of 10 V, the derived values of the mobility and ON/OFF ratio are 24.26 cm2 V− 1 s− 1 and 1.84, respectively. In addition, it was confirmed that the 3R α-In2Se3 layers had a high photoresponsivity of up to approximately 34,500 A/W under illumination (\(\lambda\) = 750 nm).
期刊介绍：
Electronic Materials Letters is an official journal of the Korean Institute of Metals and Materials. It is a peer-reviewed international journal publishing print and online version. It covers all disciplines of research and technology in electronic materials. Emphasis is placed on science, engineering and applications of advanced materials, including electronic, magnetic, optical, organic, electrochemical, mechanical, and nanoscale materials. The aspects of synthesis and processing include thin films, nanostructures, self assembly, and bulk, all related to thermodynamics, kinetics and/or modeling.
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