M. Abdelhamid, A. Atta, A. M. Abdel reheem, A. Ashour
{"title":"Ion irradiation induced effects on the surface characteristics and electrical properties of Ge-Bi-Se thin films","authors":"M. Abdelhamid, A. Atta, A. M. Abdel reheem, A. Ashour","doi":"10.1680/jsuin.22.01004","DOIUrl":null,"url":null,"abstract":"In this study, the fabricated amorphous chalcogenide Ge10Se70Bi20 thin films were irradiated by nitrogen (N+), argon (Ar+), hydrogen (H+) and oxygen (O+) ion beams. The compositions of the pure and irradiated films were investigated using X-ray diffraction (XRD), which confirming the amorphous structures of the pristine and the irradiated Ge10Se70Bi20 thin films. The optical parameters such as optical bandgap, absorption edge, Urbach energy, Tauc parameter, and extinction coefficient of the un-irradiated and irradiated films were determined using UV/Vis spectroscopy. The energy gap is found to reduce from 1.355 eV for un-irradiated Ge10Se70Bi20 to 1.02 eV, 0.73 eV, 0.60 eV and 0.51 eV after irradiation by N+, Ar+, H+ and O+ beam respectively. While, the band tail is 0.12 eV of Ge10Se70Bi20, increased to 0.16 eV, 0.40 eV, 0.45 eV and 0.48 eV after irradiation by N,+ Ar+, H+and O+ respectively. In particular, the conductivity increased by two orders after the pristine film was exposed to oxygen beam. The dc electrical conductivity of the pristine film was increased from 1.5x10−7 to 1.4x10−5 Ω−1.cm−1 after irradiation by oxygen ion beam. Besides, the activation energy and Mott’s parameters for the original and irradiated Ge10Se70Bi20 films were deduced. The reported modifications on the optical and electrical parameters, propose that the irradiated Ge10Se70B20 thin films to be used in important applications, e.g., optical data storage and optoelectronic devices.","PeriodicalId":22032,"journal":{"name":"Surface Innovations","volume":null,"pages":null},"PeriodicalIF":2.7000,"publicationDate":"2022-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Surface Innovations","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1680/jsuin.22.01004","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}
引用次数: 2
Abstract
In this study, the fabricated amorphous chalcogenide Ge10Se70Bi20 thin films were irradiated by nitrogen (N+), argon (Ar+), hydrogen (H+) and oxygen (O+) ion beams. The compositions of the pure and irradiated films were investigated using X-ray diffraction (XRD), which confirming the amorphous structures of the pristine and the irradiated Ge10Se70Bi20 thin films. The optical parameters such as optical bandgap, absorption edge, Urbach energy, Tauc parameter, and extinction coefficient of the un-irradiated and irradiated films were determined using UV/Vis spectroscopy. The energy gap is found to reduce from 1.355 eV for un-irradiated Ge10Se70Bi20 to 1.02 eV, 0.73 eV, 0.60 eV and 0.51 eV after irradiation by N+, Ar+, H+ and O+ beam respectively. While, the band tail is 0.12 eV of Ge10Se70Bi20, increased to 0.16 eV, 0.40 eV, 0.45 eV and 0.48 eV after irradiation by N,+ Ar+, H+and O+ respectively. In particular, the conductivity increased by two orders after the pristine film was exposed to oxygen beam. The dc electrical conductivity of the pristine film was increased from 1.5x10−7 to 1.4x10−5 Ω−1.cm−1 after irradiation by oxygen ion beam. Besides, the activation energy and Mott’s parameters for the original and irradiated Ge10Se70Bi20 films were deduced. The reported modifications on the optical and electrical parameters, propose that the irradiated Ge10Se70B20 thin films to be used in important applications, e.g., optical data storage and optoelectronic devices.
Surface InnovationsCHEMISTRY, PHYSICALMATERIALS SCIENCE, COAT-MATERIALS SCIENCE, COATINGS & FILMS
CiteScore
5.80
自引率
22.90%
发文量
66
期刊介绍:
The material innovations on surfaces, combined with understanding and manipulation of physics and chemistry of functional surfaces and coatings, have exploded in the past decade at an incredibly rapid pace.
Superhydrophobicity, superhydrophlicity, self-cleaning, self-healing, anti-fouling, anti-bacterial, etc., have become important fundamental topics of surface science research community driven by curiosity of physics, chemistry, and biology of interaction phenomenon at surfaces and their enormous potential in practical applications. Materials having controlled-functionality surfaces and coatings are important to the manufacturing of new products for environmental control, liquid manipulation, nanotechnological advances, biomedical engineering, pharmacy, biotechnology, and many others, and are part of the most promising technological innovations of the twenty-first century.