Ion irradiation induced effects on the surface characteristics and electrical properties of Ge-Bi-Se thin films

IF 2.7 4区 材料科学 Q3 CHEMISTRY, PHYSICAL Surface Innovations Pub Date : 2022-06-10 DOI:10.1680/jsuin.22.01004
M. Abdelhamid, A. Atta, A. M. Abdel reheem, A. Ashour
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引用次数: 2

Abstract

In this study, the fabricated amorphous chalcogenide Ge10Se70Bi20 thin films were irradiated by nitrogen (N+), argon (Ar+), hydrogen (H+) and oxygen (O+) ion beams. The compositions of the pure and irradiated films were investigated using X-ray diffraction (XRD), which confirming the amorphous structures of the pristine and the irradiated Ge10Se70Bi20 thin films. The optical parameters such as optical bandgap, absorption edge, Urbach energy, Tauc parameter, and extinction coefficient of the un-irradiated and irradiated films were determined using UV/Vis spectroscopy. The energy gap is found to reduce from 1.355 eV for un-irradiated Ge10Se70Bi20 to 1.02 eV, 0.73 eV, 0.60 eV and 0.51 eV after irradiation by N+, Ar+, H+ and O+ beam respectively. While, the band tail is 0.12 eV of Ge10Se70Bi20, increased to 0.16 eV, 0.40 eV, 0.45 eV and 0.48 eV after irradiation by N,+ Ar+, H+and O+ respectively. In particular, the conductivity increased by two orders after the pristine film was exposed to oxygen beam. The dc electrical conductivity of the pristine film was increased from 1.5x10−7 to 1.4x10−5 Ω−1.cm−1 after irradiation by oxygen ion beam. Besides, the activation energy and Mott’s parameters for the original and irradiated Ge10Se70Bi20 films were deduced. The reported modifications on the optical and electrical parameters, propose that the irradiated Ge10Se70B20 thin films to be used in important applications, e.g., optical data storage and optoelectronic devices.
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离子辐照对Ge-Bi-Se薄膜表面特性和电学性能的影响
在本研究中,用氮(N+)、氩(Ar+)、氢(H+)和氧(O+)离子束辐照制备的非晶硫族化合物Ge10Se70Bi20薄膜。使用X射线衍射(XRD)研究了纯薄膜和辐照薄膜的组成,证实了原始薄膜和辐照Ge10Se70Bi20薄膜的非晶结构。用紫外/可见光谱法测定了未辐照和辐照薄膜的光学参数,如光学带隙、吸收边、Urbach能量、Tauc参数和消光系数。发现能隙从1.355减小 未辐照Ge10Se70Bi20至1.02的eV eV,0.73 eV,0.60 eV和0.51 eV。而带尾为0.12 Ge10Se70Bi20的eV增加到0.16 eV,0.40 eV,0.45 eV和0.48 eV。特别地,在原始膜暴露于氧束之后,电导率增加了两个数量级。原始薄膜的直流电导率从1.5x10−7增加到1.4x10−5 Ω−1.cm−1。此外,推导了原始和辐照Ge10Se70Bi20薄膜的活化能和莫特参数。报道的对光学和电学参数的修改表明,辐照的Ge10Se70B20薄膜可用于重要应用,如光学数据存储和光电子器件。
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来源期刊
Surface Innovations
Surface Innovations CHEMISTRY, PHYSICALMATERIALS SCIENCE, COAT-MATERIALS SCIENCE, COATINGS & FILMS
CiteScore
5.80
自引率
22.90%
发文量
66
期刊介绍: The material innovations on surfaces, combined with understanding and manipulation of physics and chemistry of functional surfaces and coatings, have exploded in the past decade at an incredibly rapid pace. Superhydrophobicity, superhydrophlicity, self-cleaning, self-healing, anti-fouling, anti-bacterial, etc., have become important fundamental topics of surface science research community driven by curiosity of physics, chemistry, and biology of interaction phenomenon at surfaces and their enormous potential in practical applications. Materials having controlled-functionality surfaces and coatings are important to the manufacturing of new products for environmental control, liquid manipulation, nanotechnological advances, biomedical engineering, pharmacy, biotechnology, and many others, and are part of the most promising technological innovations of the twenty-first century.
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