Non-Volatile Bipolar TiN/LaMnO3/Pt Memristors with Optimized Performance

Materials Today Electronics Pub Date : 2023-09-01 DOI:10.1016/j.mtelec.2023.100054

Raquel Rodriguez-Lamas , Dolors Pla , Caroline Pirovano , Odette Chaix-Pluchery , Carlos Moncasi , Michel Boudard , Rose-Noëlle Vannier , Carmen Jiménez , Mónica Burriel

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Abstract

LaMnO_3+δ (LMO) perovskite is a very interesting candidate for Valence Change Memories due to its flexible stoichiometry, accommodated through the Mn⁺³/Mn⁺⁴ equilibrium, at the origin of significant resistivity changes. Here, the successful combination of a LMO layer, with a top active TiN electrode and a bottom inert Pt electrode, is presented. The manganite layer is integrated on silicon-based substrates in the form of a polycrystalline film. By comparing the memristive behavior of these TiN/LMO/Pt devices with Au/LMO/Pt devices prepared on the same film, the essential role of the active oxygen electrode is put in evidence. TiN/LMO/Pt memristive devices show optimized performance, operating in both sweep and pulse mode, with the capability of cycling more than a hundred times and showing good retention. Furthermore, a simple phenomenological model describing the memristive behavior of the devices is also presented.

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性能优化的非易失性双极TiN/LaMnO3/Pt忆阻器

LaMnO3+δ（LMO）钙钛矿是价变存储器的一个非常有趣的候选者，因为它的化学计量灵活，通过Mn+3/Mn+4平衡调节，在显著电阻率变化的起点。在此，介绍了LMO层与顶部活性TiN电极和底部惰性Pt电极的成功组合。锰酸盐层以多晶膜的形式集成在硅基衬底上。通过比较这些TiN/LMO/Pt器件与在同一膜上制备的Au/LMO/Pt器件的忆阻行为，证明了活性氧电极的重要作用。TiN/LMO/Pt忆阻器件在扫描和脉冲模式下都表现出优化的性能，具有100多次循环的能力，并表现出良好的保持性。此外，还提出了一个描述器件忆阻行为的简单唯象模型。

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Materials Today Electronics

CiteScore

2.10

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0.00%

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