A Survey of GaN HEMT Technologies for Millimeter-Wave Low Noise Applications

IF 6.9 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE journal of microwaves Pub Date : 2023-09-22 DOI:10.1109/JMW.2023.3313111

Nicholas C. Miller;Andrea Arias-Purdue;Erdem Arkun;David Brown;James F. Buckwalter;Robert L. Coffie;Andrea Corrion;Daniel J. Denninghoff;Michael Elliott;Dave Fanning;Ryan Gilbert;Daniel S. Green;Florian Herrault;Ben Heying;Casey M. King;Eythan Lam;Jeong-Sun Moon;Petra V. Rowell;Georges Siddiqi;Ioulia Smorchkova;Joe Tai;Jansen Uyeda;Mike Wojtowicz

{"title":"A Survey of GaN HEMT Technologies for Millimeter-Wave Low Noise Applications","authors":"Nicholas C. Miller;Andrea Arias-Purdue;Erdem Arkun;David Brown;James F. Buckwalter;Robert L. Coffie;Andrea Corrion;Daniel J. Denninghoff;Michael Elliott;Dave Fanning;Ryan Gilbert;Daniel S. Green;Florian Herrault;Ben Heying;Casey M. King;Eythan Lam;Jeong-Sun Moon;Petra V. Rowell;Georges Siddiqi;Ioulia Smorchkova;Joe Tai;Jansen Uyeda;Mike Wojtowicz","doi":"10.1109/JMW.2023.3313111","DOIUrl":null,"url":null,"abstract":"This article presents a set of measured benchmarks for the noise and gain performance of six different millimeter-wave (mm-wave) gallium nitride (GaN) high electron mobility transistor (HEMT) technologies fabricated at four different foundries in the United States. Measurements of the GaN transistors were collected on two independent noise parameter (NP) systems from 8–50 GHz and 75–110 GHz. The resulting raw NPs were stitched together to yield ultra broadband 8–110 GHz smoothed NPs. Several comparisons and summaries of the minimum noise figure and associated gain are reported for the six different GaN technologies. This work seeks to provide an initial database for noise and gain of GaN HEMTs at mm-wave frequencies to quantify progress on technology in the future.","PeriodicalId":93296,"journal":{"name":"IEEE journal of microwaves","volume":"3 4","pages":"1134-1146"},"PeriodicalIF":6.9000,"publicationDate":"2023-09-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/iel7/9171629/10271404/10260709.pdf","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE journal of microwaves","FirstCategoryId":"1085","ListUrlMain":"https://ieeexplore.ieee.org/document/10260709/","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 1

Abstract

This article presents a set of measured benchmarks for the noise and gain performance of six different millimeter-wave (mm-wave) gallium nitride (GaN) high electron mobility transistor (HEMT) technologies fabricated at four different foundries in the United States. Measurements of the GaN transistors were collected on two independent noise parameter (NP) systems from 8–50 GHz and 75–110 GHz. The resulting raw NPs were stitched together to yield ultra broadband 8–110 GHz smoothed NPs. Several comparisons and summaries of the minimum noise figure and associated gain are reported for the six different GaN technologies. This work seeks to provide an initial database for noise and gain of GaN HEMTs at mm-wave frequencies to quantify progress on technology in the future.

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毫米波低噪声GaN HEMT技术综述

本文介绍了在美国四家不同的铸造厂制造的六种不同毫米波（毫米波）氮化镓（GaN）高电子迁移率晶体管（HEMT）技术的噪声和增益性能的一组测量基准。GaN晶体管的测量是在8–50 GHz和75–110 GHz的两个独立噪声参数（NP）系统上收集的。将得到的原始NP缝合在一起，以产生8–110 GHz的超宽带平滑NP。报道了六种不同GaN技术的最小噪声系数和相关增益的几个比较和总结。这项工作旨在为毫米波频率下的GaN HEMT的噪声和增益提供一个初始数据库，以量化未来技术的进展。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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