High-Power III–V/Si Integrated Wavelength Tunable Laser for L-Band Applications

Abstract

We demonstrate a III-V/Si widely wavelength tunable laser covering the entire L-band for the optical communication systems. By carefully designing the silicon ring filter, low threshold current and high output power are expected. Using the standard silicon photonic process, the silicon filter chip is fabricated and compactly packaged with a reflective semiconductor optical amplifier. The low threshold current of 20 mA is achieved at 15 °C, and over 76 mW output power is obtained at 320 mA. The wavelength tuning range from 1565 nm to 1635 nm is realized with the side-mode suppression ratio larger than 50 dB. Furthermore, the intrinsic linewidth narrower than 25 kHz and relative intensity noise below −152 dB/Hz is achieved, which can support the coherent communications.