Growth and integration of aligned carbon nanotube-based field emission cathode for electron gun device-level fabrication

Nano Trends Pub Date : 2023-06-01 DOI:10.1016/j.nwnano.2023.100009

Balaji Padya , M. Ravi , P.K. Jain

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引用次数: 1

Abstract

This study elucidates on growth and integration of aligned carbon nanotube-based field emission cathode for electron gun-device fabrication. Particularly, it emphasises on field emission (FE) and thermal transport (TT) properties of carbon nanotube (CNT) arrays with controlled atomistic defects (AD) to design a cold cathode (CC) for electron gun. To assess the influence of AD on FE and TT, aligned undoped (pure CNT) and N-doped herringbone (doped CNT) were fabricated using droplet-assisted solvent-thermolysis to use them as CC. Results demonstrated that doped CNT with higher degree of AD exhibited a lower turn-on field in FE in comparison to pure CNT could be ascribed to N addition in carbon lattice. Ambiguously, doping-mediated AD in doped CNT helps to achieve the best FE but lowers TT with significant decrease in thermal conductivity (111 to 5.1 W/m.k at room temperature) in comparison to pure CNT. Based on the FE behavior, a doped CNT arrays-based cathode was integrated into an electron gun, which exhibited maximum emission current of 81.3 mA/cm² at a grid voltage of 2 kV.

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用于电子枪器件级制造的定向碳纳米管场发射阴极的生长和集成

本研究阐述了用于电子枪器件制造的定向碳纳米管基场发射阴极的生长和集成。特别是，它强调了具有可控原子缺陷（AD）的碳纳米管（CNT）阵列的场发射（FE）和热传输（TT）特性，以设计用于电子枪的冷阴极（CC）。为了评估AD对FE和TT的影响，使用液滴辅助溶剂热解法制备了取向的未掺杂（纯CNT）和N掺杂的人字形（掺杂CNT），并将其用作CC。结果表明，与纯CNT相比，AD程度较高的掺杂CNT在FE中表现出较低的开启场，这可归因于碳晶格中添加了N。不明确的是，与纯CNT相比，掺杂CNT中的掺杂介导的AD有助于实现最佳FE，但降低了TT，热导率显著降低（室温下为111至5.1W/m.k）。基于FE行为，将掺杂的基于CNT阵列的阴极集成到电子枪中，其在2kV的栅极电压下表现出81.3mA/cm2的最大发射电流。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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