Influence of irradiation energy and damage coefficient on performance of CH3NH3PI3 photocell

Cliff Orori Mosiori
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Abstract

An organic–inorganic hybrid perovskite as a light-absorbing layer has become a key material in many laminated-structures used in photon sensing devices. Some of these devices are referred to as Organic–inorganic hybrid perovskite (OIHP)-based devices. In recent days, OIHP applications have sky-rocketed in the world of flexible photo-electronics. Due to the higher radiation tolerances, OIHP-based solar cells have been recommended for terrestrial applications which is an application that require low fabrication costs that combines lightweight materials. However, it has been noticed that when it is used in extra-terrestrial environments, these photo cell devices experience premature failures once they interact with fast multispectral radiations in terrestrial spaces. Due to these premature failures, a similar solar cell from an (OIHP)-based perovskite material of methyl ammonium lead iodide (CH3NH3PI3) was investigated as an observer layer under a multi-spectral simulated illumination. After simulation, data for the expected photocurrent flowing through junction components on a glass substrate coated with a thin layer of Titanium dioxide (TiO 2) film was obtained. The influence of energy of irradiation on damage coefficients, current density, photovoltage and I–V characteristic profile curves were determined and investigated. Some general common macroscopic parameters for photon sensing were analyzed on three dimensions (3D) to determining the minority charge carriers and their induced photo-voltages with respect to junction recombination velocities. The obtained computed macroscopic parameters were incorporated into the Quite Universal Circuit Simulator software for simulation. It was established that damage coefficient influenced the I–V curve and an accumulation of charge carriers magnifies the probability of plasmons initiating degradation of the absorber layer. The atoms in the CH3NH3Pl3 crystal lattice system uniformly recoils at resonance and transport the maximum charge carriers across the P-N junction capable of creating a significant damage concentrated within a few micrometer ranges on the surface that may even extend between 0.39 to about 1.01 micrometers in size. This paper therefore evaluates the influence of irradiation energy and damage coefficient in a hybrid CH3NH3PI3 mono-facet crystal structure on exposure to multi-spectral illumination at varied irradiation energies.

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辐照能量和损伤系数对CH3NH3PI3光电池性能的影响
作为光吸收层的有机-无机杂化钙钛矿已成为光子传感器件中许多层压结构的关键材料。其中一些器件被称为基于有机-无机杂化钙钛矿(OIHP)的器件。最近几天,OIHP在柔性光电子领域的应用突飞猛进。由于具有更高的辐射耐受性,基于OIHP的太阳能电池已被推荐用于地面应用,这是一种需要低制造成本并结合轻质材料的应用。然而,人们已经注意到,当它在地外环境中使用时,这些光电池设备一旦与地面空间中的快速多光谱辐射相互作用,就会出现过早故障。由于这些过早的故障,在多光谱模拟照明下,研究了一种由甲基铵碘化铅(CH3NH3PI3)的(OIHP)基钙钛矿材料制成的类似太阳能电池作为观察层。在模拟之后,获得了流过涂覆有二氧化钛(TiO2)薄膜的玻璃基板上的结部件的预期光电流的数据。测定并研究了辐照能量对损伤系数、电流密度、光电压和I–V特性曲线的影响。在三维(3D)上分析了光子传感的一些常见宏观参数,以确定少数电荷载流子及其相对于结复合速度的感应光电压。所获得的计算宏观参数被纳入相当通用的电路模拟器软件中进行模拟。已经确定,损伤系数影响I–V曲线,电荷载流子的积累放大了等离子体激元引发吸收层退化的概率。CH3NH3Pl3晶格系统中的原子在共振时均匀地反冲,并将最大电荷载流子传输通过P-N结,该结能够在表面上产生集中在几微米范围内的显著损伤,该损伤甚至可以在0.39微米至约1.01微米之间延伸。因此,本文评估了混合CH3NH3PI3单晶结构中的辐照能量和损伤系数对在不同辐照能量下暴露于多光谱照明的影响。
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