Silicon sheets for solar cells grown from silicon powder by the SSP technique

IF 2 4区 材料科学 Q3 CRYSTALLOGRAPHY Journal of Crystal Growth Pub Date : 1990-07-01 DOI:10.1016/0022-0248(90)90319-G
A. Eyer, N. Schillinger, I. Reis, A. Räuber
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Abstract

The purpose of the SSP (silicon sheets from powder) project is to grow large area polycrystalline silicon sheets (100 × 100 mm2) for solar cells with high conversion efficiency ( > 13%). In the SSP process, a thin layer of silicon powder is converted into a coarse-grained sheet material by two consecutive melting steps using focussed incoherent light as the heat source. The feasibility of the technique was demonstrated by fabricating sheets up to 80 × 150 mm2 with a thickness of only 350 μm. Recently, a new machine has been built which allows continuous processing of ribbons of 100 mm width. The same sequence of process steps and the same heating technique are used. The sheets are characterized by metallographic and electrical methods. Grain sizes extend to some cm in length and some mm in width, showing a predominance of 〈 211〉 orientation in growth direction. Strong variations in the etch-pit density (103−106 cm-2) are correlated to variations in EBIC contrast. Test solar cells (20 × 20 mm2 area) from these sheets demonstrate the quality of the SSP material, with conversion efficiencies of up to 13.1% achieved.
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用SSP技术从硅粉中生长太阳能电池用硅片
SSP(来自粉末的硅片)项目的目的是种植用于太阳能电池的大面积多晶硅片(100 × 100 mm2),具有高转换效率(>;13%)。在SSP工艺中,使用聚焦的非相干光作为热源,通过两个连续的熔化步骤将薄层硅粉末转化为粗粒度的片状材料。通过制作厚度仅为350 μm的80 × 150 mm2的薄片,证明了该技术的可行性。最近,一台新机器已经建成,可以连续加工100毫米宽的色带。使用相同的工艺步骤顺序和相同的加热技术。用金相学和电学方法对板材进行表征。晶粒尺寸长约cm,宽约mm,在生长方向上以< 21>取向为主。腐蚀坑密度(103−106 cm-2)的强烈变化与EBIC对比度的变化相关。测试太阳能电池(20 × 20 mm2面积)从这些薄片证明了SSP材料的质量,转换效率高达13.1%。
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来源期刊
Journal of Crystal Growth
Journal of Crystal Growth 化学-晶体学
CiteScore
3.60
自引率
11.10%
发文量
373
审稿时长
65 days
期刊介绍: The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.
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