Fluoride passivation of ZnO electron transport layers for efficient PbSe colloidal quantum dot photovoltaics.

IF 4.1 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Frontiers of Optoelectronics Pub Date : 2023-10-27 DOI:10.1007/s12200-023-00082-3

Jungang He, You Ge, Ya Wang, Mohan Yuan, Hang Xia, Xingchen Zhang, Xiao Chen, Xia Wang, Xianchang Zhou, Kanghua Li, Chao Chen, Jiang Tang

{"title":"Fluoride passivation of ZnO electron transport layers for efficient PbSe colloidal quantum dot photovoltaics.","authors":"Jungang He, You Ge, Ya Wang, Mohan Yuan, Hang Xia, Xingchen Zhang, Xiao Chen, Xia Wang, Xianchang Zhou, Kanghua Li, Chao Chen, Jiang Tang","doi":"10.1007/s12200-023-00082-3","DOIUrl":null,"url":null,"abstract":"<p><p>Lead selenide (PbSe) colloidal quantum dots (CQDs) are suitable for the development of the next-generation of photovoltaics (PVs) because of efficient multiple-exciton generation and strong charge coupling ability. To date, the reported high-efficient PbSe CQD PVs use spin-coated zinc oxide (ZnO) as the electron transport layer (ETL). However, it is found that the surface defects of ZnO present a difficulty in completion of passivation, and this impedes the continuous progress of devices. To address this disadvantage, fluoride (F) anions are employed for the surface passivation of ZnO through a chemical bath deposition method (CBD). The F-passivated ZnO ETL possesses decreased densities of oxygen vacancy and a favorable band alignment. Benefiting from these improvements, PbSe CQD PVs report an efficiency of 10.04%, comparatively 9.4% higher than that of devices using sol-gel (SG) ZnO as ETL. We are optimistic that this interface passivation strategy has great potential in the development of solution-processed CQD optoelectronic devices.</p>","PeriodicalId":12685,"journal":{"name":"Frontiers of Optoelectronics","volume":"16 1","pages":"28"},"PeriodicalIF":4.1000,"publicationDate":"2023-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10611680/pdf/","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Frontiers of Optoelectronics","FirstCategoryId":"5","ListUrlMain":"https://doi.org/10.1007/s12200-023-00082-3","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

Abstract

Lead selenide (PbSe) colloidal quantum dots (CQDs) are suitable for the development of the next-generation of photovoltaics (PVs) because of efficient multiple-exciton generation and strong charge coupling ability. To date, the reported high-efficient PbSe CQD PVs use spin-coated zinc oxide (ZnO) as the electron transport layer (ETL). However, it is found that the surface defects of ZnO present a difficulty in completion of passivation, and this impedes the continuous progress of devices. To address this disadvantage, fluoride (F) anions are employed for the surface passivation of ZnO through a chemical bath deposition method (CBD). The F-passivated ZnO ETL possesses decreased densities of oxygen vacancy and a favorable band alignment. Benefiting from these improvements, PbSe CQD PVs report an efficiency of 10.04%, comparatively 9.4% higher than that of devices using sol-gel (SG) ZnO as ETL. We are optimistic that this interface passivation strategy has great potential in the development of solution-processed CQD optoelectronic devices.

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

用于高效PbSe胶体量子点光伏的ZnO电子传输层的氟化物钝化。

硒化铅（PbSe）胶体量子点（CQDs）具有高效的多激子产生和强的电荷耦合能力，适合于下一代光伏技术的发展。迄今为止，已报道的高效PbSe-CQD PV使用旋涂氧化锌（ZnO）作为电子传输层（ETL）。然而，研究发现，ZnO的表面缺陷很难完成钝化，这阻碍了器件的不断发展。为了解决这一缺点，通过化学浴沉积法（CBD）将氟（F）阴离子用于ZnO的表面钝化。F钝化的ZnO ETL具有降低的氧空位密度和良好的能带排列。得益于这些改进，PbSe CQD PV的效率为1004%，比使用溶胶-凝胶（SG）ZnO作为ETL的器件高出9.4%。我们乐观地认为，这种界面钝化策略在溶液处理CQD光电子器件的开发中具有巨大潜力。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文去求助

来源期刊

Frontiers of Optoelectronics ENGINEERING, ELECTRICAL & ELECTRONIC-

CiteScore

7.80

自引率

0.00%

发文量

583

期刊介绍： Frontiers of Optoelectronics seeks to provide a multidisciplinary forum for a broad mix of peer-reviewed academic papers in order to promote rapid communication and exchange between researchers in China and abroad. It introduces and reflects significant achievements being made in the field of photonics or optoelectronics. The topics include, but are not limited to, semiconductor optoelectronics, nano-photonics, information photonics, energy photonics, ultrafast photonics, biomedical photonics, nonlinear photonics, fiber optics, laser and terahertz technology and intelligent photonics. The journal publishes reviews, research articles, letters, comments, special issues and so on. Frontiers of Optoelectronics especially encourages papers from new emerging and multidisciplinary areas, papers reflecting the international trends of research and development, and on special topics reporting progress made in the field of optoelectronics. All published papers will reflect the original thoughts of researchers and practitioners on basic theories, design and new technology in optoelectronics. Frontiers of Optoelectronics is strictly peer-reviewed and only accepts original submissions in English. It is a fully OA journal and the APCs are covered by Higher Education Press and Huazhong University of Science and Technology. ● Presents the latest developments in optoelectronics and optics ● Emphasizes the latest developments of new optoelectronic materials, devices, systems and applications ● Covers industrial photonics, information photonics, biomedical photonics, energy photonics, laser and terahertz technology, and more