J. Kopecki , D. Kiesler , M. Leins , A. Schulz , M. Walker , M. Kaiser , H. Muegge , U. Stroth
{"title":"Investigations of a high volume atmospheric plasma torch at 915 MHz","authors":"J. Kopecki , D. Kiesler , M. Leins , A. Schulz , M. Walker , M. Kaiser , H. Muegge , U. Stroth","doi":"10.1016/j.surfcoat.2011.04.031","DOIUrl":null,"url":null,"abstract":"<div><p><span>An atmospheric pressure microwave plasma torch at a frequency of 915</span> <span>MHz was developed and investigated. The development was accompanied by simulations of the electromagnetic field<span> distribution in the plasma device with the programme CST Microwave Studio®. Optical emission spectroscopy (OES) was carried out in order to determine the gas temperature of the plasma. The measured temperature of an argon/hydrogen-plasma was up to 7000</span></span> <span>K which is high enough to evaporate all materials. As an application we used the plasma torch for reactive evaporation of silicon powder and subsequent deposition of silicon coatings with different morphologies which were investigated mainly by scanning electron microscopy.</span></p></div>","PeriodicalId":22009,"journal":{"name":"Surface & Coatings Technology","volume":"205 ","pages":"Pages S342-S346"},"PeriodicalIF":5.3000,"publicationDate":"2011-07-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/j.surfcoat.2011.04.031","citationCount":"6","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Surface & Coatings Technology","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0257897211003768","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"MATERIALS SCIENCE, COATINGS & FILMS","Score":null,"Total":0}
引用次数: 6
Abstract
An atmospheric pressure microwave plasma torch at a frequency of 915MHz was developed and investigated. The development was accompanied by simulations of the electromagnetic field distribution in the plasma device with the programme CST Microwave Studio®. Optical emission spectroscopy (OES) was carried out in order to determine the gas temperature of the plasma. The measured temperature of an argon/hydrogen-plasma was up to 7000K which is high enough to evaporate all materials. As an application we used the plasma torch for reactive evaporation of silicon powder and subsequent deposition of silicon coatings with different morphologies which were investigated mainly by scanning electron microscopy.
期刊介绍:
Surface and Coatings Technology is an international archival journal publishing scientific papers on significant developments in surface and interface engineering to modify and improve the surface properties of materials for protection in demanding contact conditions or aggressive environments, or for enhanced functional performance. Contributions range from original scientific articles concerned with fundamental and applied aspects of research or direct applications of metallic, inorganic, organic and composite coatings, to invited reviews of current technology in specific areas. Papers submitted to this journal are expected to be in line with the following aspects in processes, and properties/performance:
A. Processes: Physical and chemical vapour deposition techniques, thermal and plasma spraying, surface modification by directed energy techniques such as ion, electron and laser beams, thermo-chemical treatment, wet chemical and electrochemical processes such as plating, sol-gel coating, anodization, plasma electrolytic oxidation, etc., but excluding painting.
B. Properties/performance: friction performance, wear resistance (e.g., abrasion, erosion, fretting, etc), corrosion and oxidation resistance, thermal protection, diffusion resistance, hydrophilicity/hydrophobicity, and properties relevant to smart materials behaviour and enhanced multifunctional performance for environmental, energy and medical applications, but excluding device aspects.