Design and fabrication of MEMS thermoelectric generators with high temperature efficiency

IF 4.9 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Sensors and Actuators A-physical Pub Date : 2008-07-01 DOI:10.1016/j.sna.2007.11.032
Till Huesgen, Peter Woias, Norbert Kockmann
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引用次数: 189

Abstract

For MEMS devices with power consumption in the range of micro-watts, thermal energy harvesting becomes a viable candidate for power supply. This paper describes a multipurpose platform to fabricate thermoelectric generators in a combined surface and bulk micromachining process. The thermocouples are deposited by thin-film processes with high integration density on the wafer surface. To provide a large thermal contact area, the heat flow path is perpendicular to the chip surface (cross-plane) and guided by thermal connectors. One thermocouple junction is thermally connected via electroplated metal stripes to the heat source and thermally insulated to the heat sink by a cavity in the wafer substrate. Simulations show that approximately 95% of the entire temperature difference over the device is located between the two thermocouple junctions. Power factors of 3.63 × 10−3 μW mm−2 K−2 and 8.14 × 10−3 μW mm−2 K−2 can be achieved with thermopiles made of Al and n-poly-Si or p-Bi0.5Sb1.5Te3 and n-Bi0.87Sb0.13, respectively. Measurements of fabricated devices show a linear output voltage of 76.08 μV K−1 per thermocouple and prove the feasibility of the concept.

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高温高效MEMS热电发生器的设计与制造
对于功耗在微瓦范围内的MEMS器件,热能收集成为一种可行的电源候选。本文介绍了一种表面微加工与本体微加工相结合的多用途热电发电机制造平台。热电偶通过薄膜工艺沉积在晶圆表面,具有较高的集成度。为了提供较大的热接触面积,热流路径垂直于芯片表面(交叉平面),并由热连接器引导。一个热电偶结通过电镀金属条与热源热连接,并通过晶圆衬底中的空腔与散热器热绝缘。模拟结果表明,整个器件上大约95%的温差位于两个热电偶结之间。Al和n-多晶硅或p-Bi0.5Sb1.5Te3和n-Bi0.87Sb0.13制成的热电堆的功率因数分别为3.63 × 10−3 μW mm−2 K−2和8.14 × 10−3 μW mm−2 K−2。测量结果表明,每个热电偶的线性输出电压为76.08 μV K−1,证明了该概念的可行性。
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来源期刊
Sensors and Actuators A-physical
Sensors and Actuators A-physical 工程技术-工程:电子与电气
CiteScore
8.10
自引率
6.50%
发文量
630
审稿时长
49 days
期刊介绍: Sensors and Actuators A: Physical brings together multidisciplinary interests in one journal entirely devoted to disseminating information on all aspects of research and development of solid-state devices for transducing physical signals. Sensors and Actuators A: Physical regularly publishes original papers, letters to the Editors and from time to time invited review articles within the following device areas: • Fundamentals and Physics, such as: classification of effects, physical effects, measurement theory, modelling of sensors, measurement standards, measurement errors, units and constants, time and frequency measurement. Modeling papers should bring new modeling techniques to the field and be supported by experimental results. • Materials and their Processing, such as: piezoelectric materials, polymers, metal oxides, III-V and II-VI semiconductors, thick and thin films, optical glass fibres, amorphous, polycrystalline and monocrystalline silicon. • Optoelectronic sensors, such as: photovoltaic diodes, photoconductors, photodiodes, phototransistors, positron-sensitive photodetectors, optoisolators, photodiode arrays, charge-coupled devices, light-emitting diodes, injection lasers and liquid-crystal displays. • Mechanical sensors, such as: metallic, thin-film and semiconductor strain gauges, diffused silicon pressure sensors, silicon accelerometers, solid-state displacement transducers, piezo junction devices, piezoelectric field-effect transducers (PiFETs), tunnel-diode strain sensors, surface acoustic wave devices, silicon micromechanical switches, solid-state flow meters and electronic flow controllers. Etc...
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