{"title":"Design and fabrication of MEMS thermoelectric generators with high temperature efficiency","authors":"Till Huesgen, Peter Woias, Norbert Kockmann","doi":"10.1016/j.sna.2007.11.032","DOIUrl":null,"url":null,"abstract":"<div><p><span>For MEMS<span> devices with power consumption<span> in the range of micro-watts, thermal energy harvesting<span><span><span> becomes a viable candidate for power supply. This paper describes a multipurpose platform to fabricate thermoelectric generators in a combined surface and bulk </span>micromachining<span> process. The thermocouples are deposited by thin-film processes with </span></span>high integration density on the wafer surface. To provide a large thermal contact area, the heat flow path is perpendicular to the chip surface (cross-plane) and guided by thermal connectors. One thermocouple junction is thermally connected via electroplated metal stripes to the heat source and thermally insulated to the heat sink by a cavity in the wafer substrate. Simulations show that approximately 95% of the entire temperature difference over the device is located between the two thermocouple junctions. Power factors of 3.63</span></span></span></span> <!-->×<!--> <!-->10<sup>−3</sup> <!-->μW<!--> <!-->mm<sup>−2</sup> <!-->K<sup>−2</sup> and 8.14<!--> <!-->×<!--> <!-->10<sup>−3</sup> <!-->μW<!--> <!-->mm<sup>−2</sup> <!-->K<sup>−2</sup><span> can be achieved with thermopiles made of Al and n-poly-Si or p-Bi</span><sub>0.5</sub>Sb<sub>1.5</sub>Te<sub>3</sub> and n-Bi<sub>0.87</sub>Sb<sub>0.13</sub>, respectively. Measurements of fabricated devices show a linear output voltage of 76.08<!--> <!-->μV<!--> <!-->K<sup>−1</sup> per thermocouple and prove the feasibility of the concept.</p></div>","PeriodicalId":21689,"journal":{"name":"Sensors and Actuators A-physical","volume":"145 ","pages":"Pages 423-429"},"PeriodicalIF":4.9000,"publicationDate":"2008-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/j.sna.2007.11.032","citationCount":"189","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Sensors and Actuators A-physical","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0924424707008862","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 189
Abstract
For MEMS devices with power consumption in the range of micro-watts, thermal energy harvesting becomes a viable candidate for power supply. This paper describes a multipurpose platform to fabricate thermoelectric generators in a combined surface and bulk micromachining process. The thermocouples are deposited by thin-film processes with high integration density on the wafer surface. To provide a large thermal contact area, the heat flow path is perpendicular to the chip surface (cross-plane) and guided by thermal connectors. One thermocouple junction is thermally connected via electroplated metal stripes to the heat source and thermally insulated to the heat sink by a cavity in the wafer substrate. Simulations show that approximately 95% of the entire temperature difference over the device is located between the two thermocouple junctions. Power factors of 3.63 × 10−3 μW mm−2 K−2 and 8.14 × 10−3 μW mm−2 K−2 can be achieved with thermopiles made of Al and n-poly-Si or p-Bi0.5Sb1.5Te3 and n-Bi0.87Sb0.13, respectively. Measurements of fabricated devices show a linear output voltage of 76.08 μV K−1 per thermocouple and prove the feasibility of the concept.
期刊介绍:
Sensors and Actuators A: Physical brings together multidisciplinary interests in one journal entirely devoted to disseminating information on all aspects of research and development of solid-state devices for transducing physical signals. Sensors and Actuators A: Physical regularly publishes original papers, letters to the Editors and from time to time invited review articles within the following device areas:
• Fundamentals and Physics, such as: classification of effects, physical effects, measurement theory, modelling of sensors, measurement standards, measurement errors, units and constants, time and frequency measurement. Modeling papers should bring new modeling techniques to the field and be supported by experimental results.
• Materials and their Processing, such as: piezoelectric materials, polymers, metal oxides, III-V and II-VI semiconductors, thick and thin films, optical glass fibres, amorphous, polycrystalline and monocrystalline silicon.
• Optoelectronic sensors, such as: photovoltaic diodes, photoconductors, photodiodes, phototransistors, positron-sensitive photodetectors, optoisolators, photodiode arrays, charge-coupled devices, light-emitting diodes, injection lasers and liquid-crystal displays.
• Mechanical sensors, such as: metallic, thin-film and semiconductor strain gauges, diffused silicon pressure sensors, silicon accelerometers, solid-state displacement transducers, piezo junction devices, piezoelectric field-effect transducers (PiFETs), tunnel-diode strain sensors, surface acoustic wave devices, silicon micromechanical switches, solid-state flow meters and electronic flow controllers.
Etc...