Determination of Γ electron and light hole effective masses in AlxGa1-xAs on the basis of energy gaps, band-gap offsets, and energy levels in AlxGa1-xAs/GaAs quantum wells
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引用次数: 23
Abstract
Experimental data of energy gaps, band offsets, and energy levels in AlxGa1−xAs/GaAs quantum wells are utilized for the determination of Γ electron and light hole effective masses in AlxGa1−xAs compounds on the basis of the author’s relations between these quantities. The temperature dependences of electron and light hole effective masses in GaAs are also obtained.
期刊介绍：
Applied Physics Letters (APL) features concise, up-to-date reports on significant new findings in applied physics. Emphasizing rapid dissemination of key data and new physical insights, APL offers prompt publication of new experimental and theoretical papers reporting applications of physics phenomena to all branches of science, engineering, and modern technology.
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