Jie Yao, Han Wang, Bingkai Yuan, Zhenpeng Hu, Changzheng Wu, Aidi Zhao
{"title":"Ultrathin Van der Waals Antiferromagnet CrTe3 for Fabrication of In-Plane CrTe3/CrTe2 Monolayer Magnetic Heterostructures","authors":"Jie Yao, Han Wang, Bingkai Yuan, Zhenpeng Hu, Changzheng Wu, Aidi Zhao","doi":"10.1002/adma.202200236","DOIUrl":null,"url":null,"abstract":"<p>Ultrathin van der Waals (vdW) magnets are heavily pursued for potential applications in developing high-density miniaturized electronic/spintronic devices as well as for topological physics in low-dimensional structures. Despite the rapid advances in ultrathin ferromagnetic vdW magnets, the antiferromagnetic counterparts, as well as the antiferromagnetic junctions, are much less studied owing to the difficulties in both material fabrication and magnetism characterization. Ultrathin CrTe<sub>3</sub> layers have been theoretically proposed to be a vdW antiferromagnetic semiconductor with intrinsic intralayer antiferromagnetism. Herein, the epitaxial growth of monolayer (ML) and bilayer CrTe<sub>3</sub> on graphite surface is demonstrated. The structure, electronic and magnetic properties of the ML CrTe<sub>3</sub> are characterized by combining scanning tunneling microscopy/spectroscopy and non-contact atomic force microscopy and confirmed by density functional theory calculations. The CrTe<sub>3</sub> MLs can be further utilized for the fabrication of a lateral heterojunction consisting of ML CrTe<sub>2</sub> and ML CrTe<sub>3</sub> with an atomically sharp and seamless interface. Since ML CrTe<sub>2</sub> is a metallic vdW magnet, such a heterostructure presents the first in-plane magnetic metal–semiconductor heterojunction made of two vdW materials. The successful fabrication of ultrathin antiferromagnetic CrTe<sub>3</sub>, as well as the magnetic heterojunction, will stimulate the development of miniaturized antiferromagnetic spintronic devices based on vdW materials.</p>","PeriodicalId":114,"journal":{"name":"Advanced Materials","volume":null,"pages":null},"PeriodicalIF":27.4000,"publicationDate":"2022-04-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advanced Materials","FirstCategoryId":"88","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1002/adma.202200236","RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CHEMISTRY, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 12
Abstract
Ultrathin van der Waals (vdW) magnets are heavily pursued for potential applications in developing high-density miniaturized electronic/spintronic devices as well as for topological physics in low-dimensional structures. Despite the rapid advances in ultrathin ferromagnetic vdW magnets, the antiferromagnetic counterparts, as well as the antiferromagnetic junctions, are much less studied owing to the difficulties in both material fabrication and magnetism characterization. Ultrathin CrTe3 layers have been theoretically proposed to be a vdW antiferromagnetic semiconductor with intrinsic intralayer antiferromagnetism. Herein, the epitaxial growth of monolayer (ML) and bilayer CrTe3 on graphite surface is demonstrated. The structure, electronic and magnetic properties of the ML CrTe3 are characterized by combining scanning tunneling microscopy/spectroscopy and non-contact atomic force microscopy and confirmed by density functional theory calculations. The CrTe3 MLs can be further utilized for the fabrication of a lateral heterojunction consisting of ML CrTe2 and ML CrTe3 with an atomically sharp and seamless interface. Since ML CrTe2 is a metallic vdW magnet, such a heterostructure presents the first in-plane magnetic metal–semiconductor heterojunction made of two vdW materials. The successful fabrication of ultrathin antiferromagnetic CrTe3, as well as the magnetic heterojunction, will stimulate the development of miniaturized antiferromagnetic spintronic devices based on vdW materials.
期刊介绍:
Advanced Materials, one of the world's most prestigious journals and the foundation of the Advanced portfolio, is the home of choice for best-in-class materials science for more than 30 years. Following this fast-growing and interdisciplinary field, we are considering and publishing the most important discoveries on any and all materials from materials scientists, chemists, physicists, engineers as well as health and life scientists and bringing you the latest results and trends in modern materials-related research every week.