Investigation of Nitrous Oxide Nitridation Temperatures on P-Type Pi-Gate Poly-Si Junctionless Accumulation Mode TFTs

IF 2 3区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Journal of the Electron Devices Society Pub Date : 1900-01-01 DOI:10.1109/JEDS.2019.2896599
Dong-Ru Hsieh, Kun-Cheng Lin, T. Chao
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引用次数: 4

Abstract

In this paper, the influence of nitrous oxide (N2O) nitridation temperatures on p-type Pi-gate (PG) poly-Si junctionless accumulation mode (JAM) TFTs is experimentally investigated. The tetraethoxysilane (TEOS) gate oxide quality for PG JAM TFTs can be significantly improved by increasing N2O nitridation temperatures ( $T_{N}$ ) from 700 °C to 800 °C in N2O ambient, resulting in the improvement of average subthreshold swing (A.S.S.), increase of on current ( ${\text{I}}_{\text{ON}}$ ), and enhancement of TEOS gate oxide breakdown ${E}$ -field ( ${E} _{\text {OBD}}$ ). PG JAM TFTs by means of a proper channel doping concentration ( $N_{\text {ch}}= {5} \times {10}^{18}$ cm $^{-3}$ ) and a suitable $T_{N}$ (800 °C) exhibit a steep A.S.S. ~96 mV/dec. and a large ${E} _{\text {OBD}} {\sim }12.1$ MV/cm.
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p型pi栅多晶硅无结积累模式TFTs氧化亚氮化温度研究
本文通过实验研究了氧化亚氮(N2O)氮化温度对p型pi栅(PG)多晶硅无结积累模式(JAM) tft的影响。在N2O环境下,将N2O氮化温度($T_{N}$)从700℃提高到800℃,可以显著改善PG JAM tft的TEOS栅极氧化物质量,导致平均亚阈值摆幅(A.S.S.)改善,导通电流(${\text{I}}_{\text{on}}$)增加,TEOS栅极氧化物击穿(${E} _{\text{OBD}}$)增强。在适当的通道掺杂浓度($N_{\text {ch}}={5} \乘以{10}^{18}$ cm $^{-3}$)和适当的$T_{N}$(800°C)下,PG JAM tft表现出陡峭的A.S.S. ~96 mV/dec。和一个大$ {E} _{\文本{OBD}} {\ sim} 12.1美元MV /厘米。
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来源期刊
IEEE Journal of the Electron Devices Society
IEEE Journal of the Electron Devices Society Biochemistry, Genetics and Molecular Biology-Biotechnology
CiteScore
5.20
自引率
4.30%
发文量
124
审稿时长
9 weeks
期刊介绍: The IEEE Journal of the Electron Devices Society (J-EDS) is an open-access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices. The J-EDS publishes original and significant contributions relating to the theory, modelling, design, performance, and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanodevices, optoelectronics, photovoltaics, power IC''s, and micro-sensors. Tutorial and review papers on these subjects are, also, published. And, occasionally special issues with a collection of papers on particular areas in more depth and breadth are, also, published. J-EDS publishes all papers that are judged to be technically valid and original.
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