Investigation of Nitrous Oxide Nitridation Temperatures on P-Type Pi-Gate Poly-Si Junctionless Accumulation Mode TFTs

IF 2 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Journal of the Electron Devices Society Pub Date : 1900-01-01 DOI:10.1109/JEDS.2019.2896599

Dong-Ru Hsieh, Kun-Cheng Lin, T. Chao

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引用次数: 4

Abstract

In this paper, the influence of nitrous oxide (N₂O) nitridation temperatures on p-type Pi-gate (PG) poly-Si junctionless accumulation mode (JAM) TFTs is experimentally investigated. The tetraethoxysilane (TEOS) gate oxide quality for PG JAM TFTs can be significantly improved by increasing N₂O nitridation temperatures (

$T_{N}$

) from 700 °C to 800 °C in N₂O ambient, resulting in the improvement of average subthreshold swing (A.S.S.), increase of on current (

${\text{I}}_{\text{ON}}$

), and enhancement of TEOS gate oxide breakdown

${E}$

-field (

${E} _{\text {OBD}}$

). PG JAM TFTs by means of a proper channel doping concentration (

$N_{\text {ch}}= {5} \times {10}^{18}$

$^{-3}$

) and a suitable

$T_{N}$

(800 °C) exhibit a steep A.S.S. ~96 mV/dec. and a large

${E} _{\text {OBD}} {\sim }12.1$

MV/cm.

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p型pi栅多晶硅无结积累模式TFTs氧化亚氮化温度研究

本文通过实验研究了氧化亚氮(N2O)氮化温度对p型pi栅(PG)多晶硅无结积累模式(JAM) tft的影响。在N2O环境下，将N2O氮化温度($T_{N}$)从700℃提高到800℃，可以显著改善PG JAM tft的TEOS栅极氧化物质量，导致平均亚阈值摆幅(A.S.S.)改善，导通电流(${\text{I}}_{\text{on}}$)增加，TEOS栅极氧化物击穿(${E} _{\text{OBD}}$)增强。在适当的通道掺杂浓度($N_{\text {ch}}={5} \乘以{10}^{18}$ cm $^{-3}$)和适当的$T_{N}$(800°C)下，PG JAM tft表现出陡峭的A.S.S. ~96 mV/dec。和一个大$ {E} _{\文本{OBD}} {\ sim} 12.1美元MV /厘米。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Journal of the Electron Devices Society Biochemistry, Genetics and Molecular Biology-Biotechnology

CiteScore

5.20

自引率

4.30%

发文量

124

审稿时长

9 weeks

期刊介绍： The IEEE Journal of the Electron Devices Society (J-EDS) is an open-access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices. The J-EDS publishes original and significant contributions relating to the theory, modelling, design, performance, and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanodevices, optoelectronics, photovoltaics, power IC''s, and micro-sensors. Tutorial and review papers on these subjects are, also, published. And, occasionally special issues with a collection of papers on particular areas in more depth and breadth are, also, published. J-EDS publishes all papers that are judged to be technically valid and original.