Copper Passivated Zigzag MgO Nanoribbons for Potential Nanointerconnect Applications

IF 1.8 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY IEEE Open Journal of Nanotechnology Pub Date : 2022-11-18 DOI:10.1109/OJNANO.2022.3223151
M. Sankush Krishna;Sangeeta Singh;Brajesh Kumar Kaushik
{"title":"Copper Passivated Zigzag MgO Nanoribbons for Potential Nanointerconnect Applications","authors":"M. Sankush Krishna;Sangeeta Singh;Brajesh Kumar Kaushik","doi":"10.1109/OJNANO.2022.3223151","DOIUrl":null,"url":null,"abstract":"The present work explores the theoretical analysis of copper passivated MgONRs (Cu-MgO-Cu) for possible nanointerconnect applications. The first principles calculations based on density functional theory (DFT) and non-equilibrium Green's function are employed for theoretical investigation. Pristine MgONRs (H-MgO-H) and Cu-MgO-Cu are both thermodynamically stable and are metallic with H-MgO-H being relatively more stable. Further, the I-V characteristics evaluated using the two-probe method reveal the ohmic behavior of Cu-MgO-Cu. The Cu-MgO-Cu device is further investigated for the nanointerconnect applications. The computed nanoscale parasitic components such as quantum resistance (\n<inline-formula><tex-math>$R_{Q}$</tex-math></inline-formula>\n), quantum capacitance (\n<inline-formula><tex-math>$C_{Q}$</tex-math></inline-formula>\n), and kinetic inductance (\n<inline-formula><tex-math>$L_{K}$</tex-math></inline-formula>\n) are computed to be 6.46 k\n<inline-formula><tex-math>$\\Omega$</tex-math></inline-formula>\n, 5.57 fF/\n<inline-formula><tex-math>$\\mu\\text{m}$</tex-math></inline-formula>\n, and 58.17 nF/\n<inline-formula><tex-math>$\\mu$</tex-math></inline-formula>\nm, respectively. Furthermore, the delay and power delay product (PDP) of the nanointerconnect are explored which are important attributes of nanointerconnects. The findings suggest the Cu-MgO-Cu nanoribbons with low parasitic parameters can potentially be employed for nanointerconnect applications.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":null,"pages":null},"PeriodicalIF":1.8000,"publicationDate":"2022-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9954618","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Open Journal of Nanotechnology","FirstCategoryId":"1085","ListUrlMain":"https://ieeexplore.ieee.org/document/9954618/","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 2

Abstract

The present work explores the theoretical analysis of copper passivated MgONRs (Cu-MgO-Cu) for possible nanointerconnect applications. The first principles calculations based on density functional theory (DFT) and non-equilibrium Green's function are employed for theoretical investigation. Pristine MgONRs (H-MgO-H) and Cu-MgO-Cu are both thermodynamically stable and are metallic with H-MgO-H being relatively more stable. Further, the I-V characteristics evaluated using the two-probe method reveal the ohmic behavior of Cu-MgO-Cu. The Cu-MgO-Cu device is further investigated for the nanointerconnect applications. The computed nanoscale parasitic components such as quantum resistance ( $R_{Q}$ ), quantum capacitance ( $C_{Q}$ ), and kinetic inductance ( $L_{K}$ ) are computed to be 6.46 k $\Omega$ , 5.57 fF/ $\mu\text{m}$ , and 58.17 nF/ $\mu$ m, respectively. Furthermore, the delay and power delay product (PDP) of the nanointerconnect are explored which are important attributes of nanointerconnects. The findings suggest the Cu-MgO-Cu nanoribbons with low parasitic parameters can potentially be employed for nanointerconnect applications.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
潜在纳米互连应用的铜钝化之字形MgO纳米带
本工作探讨了铜钝化mgonr (Cu-MgO-Cu)的理论分析,以实现可能的纳米互连应用。基于密度泛函理论和非平衡格林函数的第一性原理计算进行了理论研究。原始mgonr (H-MgO-H)和Cu-MgO-Cu都是热力学稳定的金属,H-MgO-H相对更稳定。此外,使用双探针方法评估的I-V特性揭示了Cu-MgO-Cu的欧姆行为。进一步研究了Cu-MgO-Cu器件在纳米互连中的应用。计算得到的纳米级寄生分量如量子电阻($R_{Q}$)、量子电容($C_{Q}$)和动态电感($L_{K}$)分别为6.46 k $\Omega$、5.57 fF/ $\mu\text{m}$和58.17 nF/ $\mu$ m。此外,研究了纳米互连的延迟和功率延迟积(PDP)这两个重要属性。研究结果表明,具有低寄生参数的Cu-MgO-Cu纳米带可用于纳米互连应用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
CiteScore
3.90
自引率
17.60%
发文量
10
审稿时长
12 weeks
期刊最新文献
Fully 3D Printed Miniaturized Electrochemical Platform With Plug-and-Play Graphitized Electrodes: Exhaustively Validated for Dopamine Sensing Design and Performance Analysis of ISFET Using Various Oxide Materials for Biosensing Applications Temperature-Dependent Hydrogen Modulations of Ultra-Scaled a-IGZO Thin Film Transistor Under Gate Bias Stress Analysis and Design of FeFET Synapse With Stacked-Nanosheet Architecture Considering Cycle-to-Cycle Variations for Neuromorphic Applications Front Cover
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1