M. Sankush Krishna;Sangeeta Singh;Brajesh Kumar Kaushik
{"title":"Copper Passivated Zigzag MgO Nanoribbons for Potential Nanointerconnect Applications","authors":"M. Sankush Krishna;Sangeeta Singh;Brajesh Kumar Kaushik","doi":"10.1109/OJNANO.2022.3223151","DOIUrl":null,"url":null,"abstract":"The present work explores the theoretical analysis of copper passivated MgONRs (Cu-MgO-Cu) for possible nanointerconnect applications. The first principles calculations based on density functional theory (DFT) and non-equilibrium Green's function are employed for theoretical investigation. Pristine MgONRs (H-MgO-H) and Cu-MgO-Cu are both thermodynamically stable and are metallic with H-MgO-H being relatively more stable. Further, the I-V characteristics evaluated using the two-probe method reveal the ohmic behavior of Cu-MgO-Cu. The Cu-MgO-Cu device is further investigated for the nanointerconnect applications. The computed nanoscale parasitic components such as quantum resistance (\n<inline-formula><tex-math>$R_{Q}$</tex-math></inline-formula>\n), quantum capacitance (\n<inline-formula><tex-math>$C_{Q}$</tex-math></inline-formula>\n), and kinetic inductance (\n<inline-formula><tex-math>$L_{K}$</tex-math></inline-formula>\n) are computed to be 6.46 k\n<inline-formula><tex-math>$\\Omega$</tex-math></inline-formula>\n, 5.57 fF/\n<inline-formula><tex-math>$\\mu\\text{m}$</tex-math></inline-formula>\n, and 58.17 nF/\n<inline-formula><tex-math>$\\mu$</tex-math></inline-formula>\nm, respectively. Furthermore, the delay and power delay product (PDP) of the nanointerconnect are explored which are important attributes of nanointerconnects. The findings suggest the Cu-MgO-Cu nanoribbons with low parasitic parameters can potentially be employed for nanointerconnect applications.","PeriodicalId":446,"journal":{"name":"IEEE Open Journal of Nanotechnology","volume":"3 ","pages":"220-226"},"PeriodicalIF":1.8000,"publicationDate":"2022-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9954618","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Open Journal of Nanotechnology","FirstCategoryId":"1085","ListUrlMain":"https://ieeexplore.ieee.org/document/9954618/","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 2
Abstract
The present work explores the theoretical analysis of copper passivated MgONRs (Cu-MgO-Cu) for possible nanointerconnect applications. The first principles calculations based on density functional theory (DFT) and non-equilibrium Green's function are employed for theoretical investigation. Pristine MgONRs (H-MgO-H) and Cu-MgO-Cu are both thermodynamically stable and are metallic with H-MgO-H being relatively more stable. Further, the I-V characteristics evaluated using the two-probe method reveal the ohmic behavior of Cu-MgO-Cu. The Cu-MgO-Cu device is further investigated for the nanointerconnect applications. The computed nanoscale parasitic components such as quantum resistance (
$R_{Q}$
), quantum capacitance (
$C_{Q}$
), and kinetic inductance (
$L_{K}$
) are computed to be 6.46 k
$\Omega$
, 5.57 fF/
$\mu\text{m}$
, and 58.17 nF/
$\mu$
m, respectively. Furthermore, the delay and power delay product (PDP) of the nanointerconnect are explored which are important attributes of nanointerconnects. The findings suggest the Cu-MgO-Cu nanoribbons with low parasitic parameters can potentially be employed for nanointerconnect applications.