{"title":"Photoresponsivity-Enhanced PbS Quantum Dots/Graphene/Silicon Near-Infrared Photodetectors","authors":"Junfan Wang;Jun Chen","doi":"10.1109/TNANO.2023.3309898","DOIUrl":null,"url":null,"abstract":"The high carrier mobility in graphene, together with the ease of handling and good optical properties of colloidal quantum dots, provide high-performance materials for next-generation photodetectors. In this article, we investigated PbS quantum dots/graphene/Si near-infrared (NIR) photodetectors. The absorption of infrared light was increased by inserting a layer of Al\n<sub>2</sub>\nO\n<sub>3</sub>\n between graphene and Si to reduce the tunneling of carriers, and spin-coating PbS quantum dots on graphene to form a thin film by liquid phase exchange to replace ligands, thereby improving the device performance of PbS quantum dots/graphene/Si NIR photodetectors. Under the incident 1550 nm light, the responsivity of the detector is 0.16 A/W. Our work contributes to the study of related near-infrared silicon-based photodetectors.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"22 ","pages":"525-530"},"PeriodicalIF":2.1000,"publicationDate":"2023-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Nanotechnology","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10234015/","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
The high carrier mobility in graphene, together with the ease of handling and good optical properties of colloidal quantum dots, provide high-performance materials for next-generation photodetectors. In this article, we investigated PbS quantum dots/graphene/Si near-infrared (NIR) photodetectors. The absorption of infrared light was increased by inserting a layer of Al
2
O
3
between graphene and Si to reduce the tunneling of carriers, and spin-coating PbS quantum dots on graphene to form a thin film by liquid phase exchange to replace ligands, thereby improving the device performance of PbS quantum dots/graphene/Si NIR photodetectors. Under the incident 1550 nm light, the responsivity of the detector is 0.16 A/W. Our work contributes to the study of related near-infrared silicon-based photodetectors.
期刊介绍：
The IEEE Transactions on Nanotechnology is devoted to the publication of manuscripts of archival value in the general area of nanotechnology, which is rapidly emerging as one of the fastest growing and most promising new technological developments for the next generation and beyond.
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