J. Noguchi;T. Oshima;N. Konishi;K. Ishikawa;K. Sato;S. Uno;S. Hotta;T. Saito;H. Aoki
{"title":"Integration and reliability of Cu-SiOC interconnect for ArF/90-nm node CMOS technology","authors":"J. Noguchi;T. Oshima;N. Konishi;K. Ishikawa;K. Sato;S. Uno;S. Hotta;T. Saito;H. Aoki","doi":"10.1109/TED.2004.839755","DOIUrl":null,"url":null,"abstract":"Cu-SiOC interconnects for ArF/90-nm node technology were investigated. This paper describes the integration and reliability issues. The methods to improve chemical mechanical polishing delamination, SiOC damage and electrical shorts through the bottom interface of Cu interconnects were discussed. Reliability characteristics, such as stress-migration, electro-migration, and time-dependent dielectric breakdown (TDDB) were studied. Cu diffusion with via resistance increase by high-temperature stress, and TDDB degradation due to the ArF process were found. It was confirmed that the suggested integration process was mature and sufficiently reliable for normal operating conditions.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"51 12","pages":"2168-2174"},"PeriodicalIF":3.2000,"publicationDate":"2004-11-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1109/TED.2004.839755","citationCount":"9","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Electron Devices","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/1362983/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 9
Abstract
Cu-SiOC interconnects for ArF/90-nm node technology were investigated. This paper describes the integration and reliability issues. The methods to improve chemical mechanical polishing delamination, SiOC damage and electrical shorts through the bottom interface of Cu interconnects were discussed. Reliability characteristics, such as stress-migration, electro-migration, and time-dependent dielectric breakdown (TDDB) were studied. Cu diffusion with via resistance increase by high-temperature stress, and TDDB degradation due to the ArF process were found. It was confirmed that the suggested integration process was mature and sufficiently reliable for normal operating conditions.
期刊介绍：
IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
