Quantitative Study of Charge‐to‐Breakdown of Thin Gate Oxide for a p+‐Poly‐Si Metal Oxide Semiconductor Capacitor

IF 3.1 4区 工程技术 Q2 ELECTROCHEMISTRY Journal of The Electrochemical Society Pub Date : 1997-01-01 DOI:10.1149/1.1837471
Li‐shuenn Wang, Mou‐shiung Lin
{"title":"Quantitative Study of Charge‐to‐Breakdown of Thin Gate Oxide for a p+‐Poly‐Si Metal Oxide Semiconductor Capacitor","authors":"Li‐shuenn Wang, Mou‐shiung Lin","doi":"10.1149/1.1837471","DOIUrl":null,"url":null,"abstract":"The charge-to-breakdown (Q bd ) for p + -poly-Si MOS capacitors under positive and negative gate-bias stress was investigated. Among the various boron-implanted poly-Si samples, Q bd (+) increases with dopant concentration, but Q bd (-) decreases with the boron concentration. Meanw ile a large difference was found between the Q bd (+) and Q bd (-) values. Evidence for various degree of band bending of poly-Si was observed from C-V and Fowler-Nordheim tunneling measurements. From gate-voltage shift (ΔV g ) data after constant current stress, the centroid of the generated positive trapped charge can be determined. We modified the charge-trapping model to explain the above Q bd behavior. Hole trapping is the cause of oxide breakdown. The observed difference between gate-positive and gate-negative Q bd is due to a polarity-dependent critical trapped charge density which depends on the critical electrical field somehow related to the boron implantation. As the generated positive trapped charge reaches a critical value, part of the localized electric field near the anode disappears and the remaining part of the electric field (E) is enhanced. This critical E field triggers thermal runaway and oxide breakdown. Therefore, we determine that the amount of Q bd is related to the boron implantation.","PeriodicalId":17364,"journal":{"name":"Journal of The Electrochemical Society","volume":"144 1","pages":"698-704"},"PeriodicalIF":3.1000,"publicationDate":"1997-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1149/1.1837471","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of The Electrochemical Society","FirstCategoryId":"5","ListUrlMain":"https://doi.org/10.1149/1.1837471","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ELECTROCHEMISTRY","Score":null,"Total":0}
引用次数: 0

Abstract

The charge-to-breakdown (Q bd ) for p + -poly-Si MOS capacitors under positive and negative gate-bias stress was investigated. Among the various boron-implanted poly-Si samples, Q bd (+) increases with dopant concentration, but Q bd (-) decreases with the boron concentration. Meanw ile a large difference was found between the Q bd (+) and Q bd (-) values. Evidence for various degree of band bending of poly-Si was observed from C-V and Fowler-Nordheim tunneling measurements. From gate-voltage shift (ΔV g ) data after constant current stress, the centroid of the generated positive trapped charge can be determined. We modified the charge-trapping model to explain the above Q bd behavior. Hole trapping is the cause of oxide breakdown. The observed difference between gate-positive and gate-negative Q bd is due to a polarity-dependent critical trapped charge density which depends on the critical electrical field somehow related to the boron implantation. As the generated positive trapped charge reaches a critical value, part of the localized electric field near the anode disappears and the remaining part of the electric field (E) is enhanced. This critical E field triggers thermal runaway and oxide breakdown. Therefore, we determine that the amount of Q bd is related to the boron implantation.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
p+ -聚硅金属氧化物半导体电容器薄栅氧化物电荷击穿的定量研究
研究了p + -多晶硅MOS电容器在正、负栅极偏置应力下的电荷击穿特性。在不同硼注入多晶硅样品中,qbd(+)随掺杂浓度的增加而增加,而qbd(-)随掺杂浓度的增加而降低。同时,qbd(+)值与qbd(-)值之间存在较大差异。从C-V和Fowler-Nordheim隧道测量中观察到多晶硅不同程度的能带弯曲的证据。从恒流应力后的栅极电压位移(ΔV g)数据可以确定产生的正捕获电荷的质心。我们修改了电荷捕获模型来解释上述qbd行为。空穴捕获是氧化物分解的原因。所观察到的栅正和栅负qbd之间的差异是由于极性依赖的临界捕获电荷密度,该密度取决于与硼注入有关的临界电场。当产生的正捕获电荷达到临界值时,阳极附近的局部电场部分消失,剩余部分电场(E)增强。这个临界E场触发热失控和氧化物击穿。因此,我们确定qbd的量与硼的注入有关。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
CiteScore
7.20
自引率
12.80%
发文量
1369
审稿时长
1.5 months
期刊介绍: The Journal of The Electrochemical Society (JES) is the leader in the field of solid-state and electrochemical science and technology. This peer-reviewed journal publishes an average of 450 pages of 70 articles each month. Articles are posted online, with a monthly paper edition following electronic publication. The ECS membership benefits package includes access to the electronic edition of this journal.
期刊最新文献
Electrochemical HOCl Production Modeling for an Electrochemical Catheter. Comprehensive Analysis of Commercial Sodium-Ion Batteries: Structural and Electrochemical Insights Electrochemical Behaviour of Nickel(II)-Rhenium(VII) And Electrodeposition of Nickel-Rhenium Alloy from Choline Chloride - Urea Deep Eutectic Solvent Optimization of Post-Annealing Temperature of RF Magnetron-Sputtered ZnO Thin Films for Enhancing Performances of UV Photodetectors Spatially Resolved Assessment and Analysis of Al-Zn, Mg, and Mg/Al-Zn Metal-Rich Primers Applied to AA 7075-T651 in Full Immersion
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1