{"title":"Quantitative Study of Charge‐to‐Breakdown of Thin Gate Oxide for a p+‐Poly‐Si Metal Oxide Semiconductor Capacitor","authors":"Li‐shuenn Wang, Mou‐shiung Lin","doi":"10.1149/1.1837471","DOIUrl":null,"url":null,"abstract":"The charge-to-breakdown (Q bd ) for p + -poly-Si MOS capacitors under positive and negative gate-bias stress was investigated. Among the various boron-implanted poly-Si samples, Q bd (+) increases with dopant concentration, but Q bd (-) decreases with the boron concentration. Meanw ile a large difference was found between the Q bd (+) and Q bd (-) values. Evidence for various degree of band bending of poly-Si was observed from C-V and Fowler-Nordheim tunneling measurements. From gate-voltage shift (ΔV g ) data after constant current stress, the centroid of the generated positive trapped charge can be determined. We modified the charge-trapping model to explain the above Q bd behavior. Hole trapping is the cause of oxide breakdown. The observed difference between gate-positive and gate-negative Q bd is due to a polarity-dependent critical trapped charge density which depends on the critical electrical field somehow related to the boron implantation. As the generated positive trapped charge reaches a critical value, part of the localized electric field near the anode disappears and the remaining part of the electric field (E) is enhanced. This critical E field triggers thermal runaway and oxide breakdown. Therefore, we determine that the amount of Q bd is related to the boron implantation.","PeriodicalId":17364,"journal":{"name":"Journal of The Electrochemical Society","volume":"144 1","pages":"698-704"},"PeriodicalIF":3.1000,"publicationDate":"1997-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1149/1.1837471","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of The Electrochemical Society","FirstCategoryId":"5","ListUrlMain":"https://doi.org/10.1149/1.1837471","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ELECTROCHEMISTRY","Score":null,"Total":0}
引用次数: 0
Abstract
The charge-to-breakdown (Q bd ) for p + -poly-Si MOS capacitors under positive and negative gate-bias stress was investigated. Among the various boron-implanted poly-Si samples, Q bd (+) increases with dopant concentration, but Q bd (-) decreases with the boron concentration. Meanw ile a large difference was found between the Q bd (+) and Q bd (-) values. Evidence for various degree of band bending of poly-Si was observed from C-V and Fowler-Nordheim tunneling measurements. From gate-voltage shift (ΔV g ) data after constant current stress, the centroid of the generated positive trapped charge can be determined. We modified the charge-trapping model to explain the above Q bd behavior. Hole trapping is the cause of oxide breakdown. The observed difference between gate-positive and gate-negative Q bd is due to a polarity-dependent critical trapped charge density which depends on the critical electrical field somehow related to the boron implantation. As the generated positive trapped charge reaches a critical value, part of the localized electric field near the anode disappears and the remaining part of the electric field (E) is enhanced. This critical E field triggers thermal runaway and oxide breakdown. Therefore, we determine that the amount of Q bd is related to the boron implantation.
期刊介绍:
The Journal of The Electrochemical Society (JES) is the leader in the field of solid-state and electrochemical science and technology. This peer-reviewed journal publishes an average of 450 pages of 70 articles each month. Articles are posted online, with a monthly paper edition following electronic publication. The ECS membership benefits package includes access to the electronic edition of this journal.