{"title":"Microvia Filling with Nickel-Tungsten Alloy to Decrease the Coefficient of Thermal Expansion of Electronic Circuit Interconnections","authors":"Yu-Tien Lin, Hsin-Man Huang, Hsin-Wei Wang, W. Dow, Jing-Yuan Lin, Ping-He Chang, Horn-Chin Lee","doi":"10.1149/2.0031509EEL","DOIUrl":null,"url":null,"abstract":"A nickel-tungsten alloy plating formula was developed to electrochemically fill the microvias of printed circuit boards and the through-silicon vias (TSVs) of wafers. The plating solution was composed of Ni(SO3NH2)2, citric acid, sodium citrate, Na2WO4, chloride ions, and 2-mercapto-5-benzimidazolesulfonic acid. A void-free Ni-W superfilling of a microvia and a TSV were achieved. The tungsten content in the filled alloy varied from 1.5 atom% to 5.5 atom%, depending on the plating temperature. The coefficient of thermal expansion of the filled Ni-W was theoretically calculated according the tungsten content, which was lower than that of copper. © The Author(s) 2015. Published by ECS. This is an open access article distributed under the terms of the Creative Commons Attribution 4.0 License (CC BY, http://creativecommons.org/licenses/by/4.0/), which permits unrestricted reuse of the work in any","PeriodicalId":11470,"journal":{"name":"ECS Electrochemistry Letters","volume":"4 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2015-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1149/2.0031509EEL","citationCount":"9","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ECS Electrochemistry Letters","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1149/2.0031509EEL","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 9
用镍钨合金填充微孔降低电子电路互连的热膨胀系数
开发了一种电镀镍钨合金的配方,用于电化学填充印刷电路板的微孔和晶圆片的硅通孔。镀液由Ni(SO3NH2)2、柠檬酸、柠檬酸钠、Na2WO4、氯离子和2-巯基-5-苯并咪唑磺酸组成。实现了微孔和TSV的无空隙镍钨填充。根据电镀温度的不同,填充合金中的钨含量在1.5 ~ 5.5原子%之间变化。从理论上计算了填充后的Ni-W的热膨胀系数,其中钨的含量低于铜的含量。©作者2015。由ECS出版。这是一篇在知识共享署名4.0许可(CC BY, http://creativecommons.org/licenses/by/4.0/)的条款下发布的开放获取文章,该许可允许在任何情况下不受限制地重复使用该作品
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