Bottom-up Filling of TSV-Scaled Trenches by Using Step Current Electrodeposition
Hoe Chul Kim, M. Kim, Youngran Seo, Yoonjae Lee, Seunghoe Choe, Young Gyu Kim, S. Cho, J. J. Kim
{"title":"Bottom-up Filling of TSV-Scaled Trenches by Using Step Current Electrodeposition","authors":"Hoe Chul Kim, M. Kim, Youngran Seo, Yoonjae Lee, Seunghoe Choe, Young Gyu Kim, S. Cho, J. J. Kim","doi":"10.1149/2.0061510EEL","DOIUrl":null,"url":null,"abstract":"Void-free filling of TSV-scaled trenches is achieved by adding a new leveler with an accelerator and polymeric suppressor. Leveler containing two quaternary ammonium salts allows for the galvanostatic bottom-up filling. In addition, the filling time is reduced by applying the step current comprising a first step to establish a growing surface and a second step to reduce the filling time. The deposition height of the growing surface during the first step critically determines the filling performance. By modulating the step condition, the filling time reduced by 47% compared to the constant current deposition. © The Author(s) 2015. Published by ECS. This is an open access article distributed under the terms of the Creative Commons Attribution Non-Commercial No Derivatives 4.0 License (CC BY-NC-ND, http://creativecommons.org/licenses/by-nc-nd/4.0/), which permits non-commercial reuse, distribution, and reproduction in any medium, provided the original work is not changed in any way and is properly cited. For permission for commercial reuse, please email: oa@electrochem.org. [DOI: 10.1149/2.0061510eel] All rights reserved.","PeriodicalId":11470,"journal":{"name":"ECS Electrochemistry Letters","volume":"4 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2015-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1149/2.0061510EEL","citationCount":"8","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ECS Electrochemistry Letters","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1149/2.0061510EEL","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 8
阶跃电流电沉积法自底向上填充tsv尺度沟槽
通过添加具有促进剂和聚合物抑制剂的新型矫直机,可以实现tsv尺度沟槽的无空隙填充。含有两种季铵盐的矫直机允许恒流自底向上填充。此外,通过施加阶跃电流来减少填充时间,该阶跃电流包括用于建立生长表面的第一步和用于减少填充时间的第二步。第一步生长表面的沉积高度决定了充填性能。通过调制阶跃条件,与恒流沉积相比,填充时间缩短了47%。©作者2015。由ECS出版。这是一篇在知识共享署名非商业禁止衍生品4.0许可(CC BY-NC-ND, http://creativecommons.org/licenses/by-nc-nd/4.0/)条款下发布的开放获取文章,该许可允许在任何媒介上进行非商业重用、分发和复制,前提是原始作品不以任何方式改变并适当引用。如需商业使用许可,请发邮件至oa@electrochem.org。[DOI: 10.1149/2.0061510eel]版权所有
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