Bus Implementation Using New Low Power PFSCL Tristate Buffers

IF 1.3 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Active and Passive Electronic Components Pub Date : 2016-02-29 DOI:10.1155/2016/4517292
N. Pandey, Bharat Choudhary, K. Gupta, Ankit Mittal
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引用次数: 5

Abstract

This paper proposes new positive feedback source coupled logic (PFSCL) tristate buffers suited to bus applications. The proposed buffers use switch to attain high impedance state and modify the load or the current source section. An interesting consequence of this is overall reduction in the power consumption. The proposed tristate buffers consume half the power compared to the available switch based counterpart. The issues with available PFSCL tristate buffers based bus implementation are identified and benefits of employing the proposed tristate buffer topologies are put forward. SPICE simulation results using TSMC 180 nm CMOS technology parameters are included to support the theoretical formulations. The performance of proposed tristate buffer topologies is examined on the basis of propagation delay, output enable time, and power consumption. It is found that one of the proposed tristate buffer topology outperforms the others in terms of all the performance parameters. An examination of behavior of available and the proposed PFSCL tristate buffer topologies under parameter variations and mismatch shows a maximum variation of 14%.
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使用新型低功耗PFSCL三态缓冲器的总线实现
本文提出了一种适合总线应用的新型正反馈源耦合逻辑(PFSCL)三态缓冲器。所提出的缓冲器使用开关来达到高阻抗状态并修改负载或电流源部分。这样做的一个有趣的结果是总体上降低了功耗。与可用的基于交换机的缓冲器相比,建议的三状态缓冲器消耗的功率只有一半。指出了现有的基于PFSCL三状态缓冲区的总线实现存在的问题,并提出了采用所提出的三状态缓冲区拓扑的好处。采用台积电180nm CMOS工艺参数的SPICE仿真结果支持理论公式。基于传播延迟、输出使能时间和功耗,对所提出的三状态缓冲拓扑的性能进行了检查。研究发现,三状态缓冲拓扑在所有性能参数方面都优于其他拓扑。在参数变化和不匹配的情况下,对现有和提议的PFSCL三态缓冲拓扑的行为进行了检查,结果显示最大变化为14%。
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来源期刊
Active and Passive Electronic Components
Active and Passive Electronic Components ENGINEERING, ELECTRICAL & ELECTRONIC-
CiteScore
1.30
自引率
0.00%
发文量
1
审稿时长
13 weeks
期刊介绍: Active and Passive Electronic Components is an international journal devoted to the science and technology of all types of electronic components. The journal publishes experimental and theoretical papers on topics such as transistors, hybrid circuits, integrated circuits, MicroElectroMechanical Systems (MEMS), sensors, high frequency devices and circuits, power devices and circuits, non-volatile memory technologies such as ferroelectric and phase transition memories, and nano electronics devices and circuits.
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