Combination of Transverse Mode Selection and Active Longitudinal Mode-Locking of Broad Area Semiconductor Lasers

Q3 Engineering Advances in Optoelectronics Pub Date : 2014-07-13 DOI:10.1155/2014/293590
Christoph Doering, H. Fouckhardt
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引用次数: 0

Abstract

Experimental results of the combination of transverse mode selection and active mode-locking with anti-reflection-coated broad area lasers (BALs) are presented. The BALs are subject to feedback from a free-space external Fourier-optical 4-setup with a reflective spatial frequency filter in the Fourier-plane for transverse mode selection. Driving the BALs with a high frequency modulated pump current above threshold active longitudinal mode-locking is achieved. Pulse durations as low as 88 ps are obtained, while the Gaussian-like fundamental or a higher order transverse mode up to mode number 5 is selected on purpose. Pulse duration and shape are nearly independent of the selected transverse mode.
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广域半导体激光器横向模式选择与主动纵向锁模的结合
介绍了抗反射涂层广域激光器横向模式选择与主动锁模相结合的实验结果。bal受到自由空间外部傅里叶光学4装置的反馈,该装置在傅里叶平面上有一个用于横向模式选择的反射空间频率滤波器。以高于阈值的高频调制泵电流驱动bal实现主动纵向锁模。脉冲持续时间低至88 ps,而高斯基态或高阶横向模式高达模式数5被故意选择。脉冲持续时间和形状几乎与所选择的横模无关。
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来源期刊
Advances in Optoelectronics
Advances in Optoelectronics ENGINEERING, ELECTRICAL & ELECTRONIC-
CiteScore
1.30
自引率
0.00%
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0
期刊介绍: Advances in OptoElectronics is a peer-reviewed, open access journal that publishes original research articles as well as review articles in all areas of optoelectronics.
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