In this paper, we seek to compare the two design theories for fiber optical parametric amplifier through simulation. The two-sideband method (standard method) has been the most widely used method in fiber optical parametric amplifier design, but it does not predict the gain shrinkage around the pumps. This technique does not consider the gain shrinking dynamics around the pump(s). The four-sideband analytical technique is an alternative technique for fiber optical parametric amplifier design, and it allows for a simplified investigation of the gain shrinking dynamics around the pump(s) due to the interaction of the various arising high-order idlers within the vicinity of the pump waves. The undertaking in this paper is to present a dual-pump fiber amplifier based on the highly nonlinear fiber and another one based on the photonic crystal fiber and ascertain if gain shrinking affects both FOPAs.
{"title":"Impact of the Four-Sideband and Two-Sideband Theories in Designing of Fiber Optical Parametric Amplifiers","authors":"Kumbirayi Nyachionjeka, H. Tarus, P. K. Langat","doi":"10.1155/2019/2938652","DOIUrl":"https://doi.org/10.1155/2019/2938652","url":null,"abstract":"In this paper, we seek to compare the two design theories for fiber optical parametric amplifier through simulation. The two-sideband method (standard method) has been the most widely used method in fiber optical parametric amplifier design, but it does not predict the gain shrinkage around the pumps. This technique does not consider the gain shrinking dynamics around the pump(s). The four-sideband analytical technique is an alternative technique for fiber optical parametric amplifier design, and it allows for a simplified investigation of the gain shrinking dynamics around the pump(s) due to the interaction of the various arising high-order idlers within the vicinity of the pump waves. The undertaking in this paper is to present a dual-pump fiber amplifier based on the highly nonlinear fiber and another one based on the photonic crystal fiber and ascertain if gain shrinking affects both FOPAs.","PeriodicalId":7352,"journal":{"name":"Advances in Optoelectronics","volume":"1 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2019-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1155/2019/2938652","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"45766473","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
H. Fouckhardt, A. Kleinschmidt, J. Strassner, Christoph Doering
Previously in this journal we have reported on fundamental transverse mode selection (TMS#0) of broad area semiconductor lasers (BALs) with integrated twice-retracted 4f set-up and film-waveguide lens as the Fourier-transform element. Now we choose and report on a simpler approach for BAL-TMS#0, i.e., the use of a stable confocal longitudinal BAL resonator of length L with a transverse constriction. The absolute value of the radius R of curvature of both mirror-facets convex in one dimension (1D) is R = L = 2f with focal length f. The round trip length 2L = 4f again makes up for a Fourier-optical 4f set-up and the constriction resulting in a resonator-internal beam waist stands for a Fourier-optical low-pass spatial frequency filter. Good TMS#0 is achieved, as long as the constriction is tight enough, but filamentation is not completely suppressed.
{"title":"1D Confocal Broad Area Semiconductor Lasers (Confocal BALs) for Fundamental Transverse Mode Selection (TMS#0)","authors":"H. Fouckhardt, A. Kleinschmidt, J. Strassner, Christoph Doering","doi":"10.1155/2019/2719808","DOIUrl":"https://doi.org/10.1155/2019/2719808","url":null,"abstract":"Previously in this journal we have reported on fundamental transverse mode selection (TMS#0) of broad area semiconductor lasers (BALs) with integrated twice-retracted 4f set-up and film-waveguide lens as the Fourier-transform element. Now we choose and report on a simpler approach for BAL-TMS#0, i.e., the use of a stable confocal longitudinal BAL resonator of length L with a transverse constriction. The absolute value of the radius R of curvature of both mirror-facets convex in one dimension (1D) is R = L = 2f with focal length f. The round trip length 2L = 4f again makes up for a Fourier-optical 4f set-up and the constriction resulting in a resonator-internal beam waist stands for a Fourier-optical low-pass spatial frequency filter. Good TMS#0 is achieved, as long as the constriction is tight enough, but filamentation is not completely suppressed.","PeriodicalId":7352,"journal":{"name":"Advances in Optoelectronics","volume":" ","pages":""},"PeriodicalIF":0.0,"publicationDate":"2019-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1155/2019/2719808","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"47592312","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This study investigates the reduction in the resolution of the striations from the center to the edge through analysis of the imaging principle and the static experimental test of a streak tube. To improve the edge spatial resolution of the streak, we apply the compressed sensing to the X-ray streak camera imaging system and construct the compressed sensing (CS) reconstruction model for the streak camera and we implement the CS objective function by the orthogonal matching method. The reconstruction performance of the Gauss measurement matrix, Bernoulli measurement matrix, and M series family measurement matrix are compared, and the reconstruction parameters are optimized. A comparison between the original imaging results and the reconstruction results shows that the contrast ratio of the CS reconstruction is 12.2% higher than that of the original, and the limit resolution is 5 lp/mm higher than that of the original image. Furthermore, the improvement effect far from the central area is better than that at the central area. The CS reconstruction on the M series family measurement matrix can improve the image contrast ratio on the edge of the image, and, thus, static and dynamic spatial resolutions of the image are improved.
{"title":"Application of M Sequence Family Measurement Matrix in Streak Camera Imaging","authors":"Ailin Liu, Jinjin Zhang, B. Guo","doi":"10.1155/2018/8094657","DOIUrl":"https://doi.org/10.1155/2018/8094657","url":null,"abstract":"This study investigates the reduction in the resolution of the striations from the center to the edge through analysis of the imaging principle and the static experimental test of a streak tube. To improve the edge spatial resolution of the streak, we apply the compressed sensing to the X-ray streak camera imaging system and construct the compressed sensing (CS) reconstruction model for the streak camera and we implement the CS objective function by the orthogonal matching method. The reconstruction performance of the Gauss measurement matrix, Bernoulli measurement matrix, and M series family measurement matrix are compared, and the reconstruction parameters are optimized. A comparison between the original imaging results and the reconstruction results shows that the contrast ratio of the CS reconstruction is 12.2% higher than that of the original, and the limit resolution is 5 lp/mm higher than that of the original image. Furthermore, the improvement effect far from the central area is better than that at the central area. The CS reconstruction on the M series family measurement matrix can improve the image contrast ratio on the edge of the image, and, thus, static and dynamic spatial resolutions of the image are improved.","PeriodicalId":7352,"journal":{"name":"Advances in Optoelectronics","volume":"1 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2018-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1155/2018/8094657","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"43682675","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
H. Fouckhardt, J. Strassner, Thomas Loeber, Christoph Doering
III/V semiconductor quantum dots (QD) are in the focus of optoelectronics research for about 25 years now. Most of the work has been done on InAs QD on GaAs substrate. But, e.g., Ga(As)Sb (antimonide) QD on GaAs substrate/buffer have also gained attention for the last 12 years. There is a scientific dispute on whether there is a wetting layer before antimonide QD formation, as commonly expected for Stransky-Krastanov growth, or not. Usually ex situ photoluminescence (PL) and atomic force microscope (AFM) measurements are performed to resolve similar issues. In this contribution, we show that reflectance anisotropy/difference spectroscopy (RAS/RDS) can be used for the same purpose as an in situ, real-time monitoring technique. It can be employed not only to identify QD growth via a distinct RAS spectrum, but also to get information on the existence of a wetting layer and its thickness. The data suggest that for antimonide QD growth the wetting layer has a thickness of 1 ML (one monolayer) only.
{"title":"1 ML Wetting Layer upon Ga(As)Sb Quantum Dot (QD) Formation on GaAs Substrate Monitored with Reflectance Anisotropy Spectroscopy (RAS)","authors":"H. Fouckhardt, J. Strassner, Thomas Loeber, Christoph Doering","doi":"10.1155/2018/8908354","DOIUrl":"https://doi.org/10.1155/2018/8908354","url":null,"abstract":"III/V semiconductor quantum dots (QD) are in the focus of optoelectronics research for about 25 years now. Most of the work has been done on InAs QD on GaAs substrate. But, e.g., Ga(As)Sb (antimonide) QD on GaAs substrate/buffer have also gained attention for the last 12 years. There is a scientific dispute on whether there is a wetting layer before antimonide QD formation, as commonly expected for Stransky-Krastanov growth, or not. Usually ex situ photoluminescence (PL) and atomic force microscope (AFM) measurements are performed to resolve similar issues. In this contribution, we show that reflectance anisotropy/difference spectroscopy (RAS/RDS) can be used for the same purpose as an in situ, real-time monitoring technique. It can be employed not only to identify QD growth via a distinct RAS spectrum, but also to get information on the existence of a wetting layer and its thickness. The data suggest that for antimonide QD growth the wetting layer has a thickness of 1 ML (one monolayer) only.","PeriodicalId":7352,"journal":{"name":"Advances in Optoelectronics","volume":" ","pages":""},"PeriodicalIF":0.0,"publicationDate":"2018-11-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1155/2018/8908354","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"47661839","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A reflector-based light-emitting diode (LED) luminaire structure that can achieve a large cut-off angle for general lighting is presented in this work. The proposed lighting unit mainly consists of a spherical reflector and a primary packaging lens that contains an aspheric surface and a spherical surface. The light rays emitted from the LED light source are well controlled by the spherical reflector and the aspheric surface of the lens for the purpose of obtaining a uniform illumination on the target surface. Both the ideal Lambertian LED and non-Lambertian LED light sources were employed to validate the proposed structure and the performance of the designed lighting units was analyzed by optical simulation. The results show that the light utilization efficiencies and the estimated uniformities are 92.96% and 91.11% for ideal Lambertian LED-based lighting unit and 93.31% and 91.64% for non-Lambertian LED-based lighting unit, respectively. Further analysis shows that the tolerances of horizontal, vertical, and rotational deviation of the both lighting units were about 2.0 mm, 1.0 mm, and 1.0°, respectively.
{"title":"A Practical Method to Design Reflector-Based Light-Emitting Diode Luminaire for General Lighting","authors":"Jinren Yan","doi":"10.1155/2018/7138592","DOIUrl":"https://doi.org/10.1155/2018/7138592","url":null,"abstract":"A reflector-based light-emitting diode (LED) luminaire structure that can achieve a large cut-off angle for general lighting is presented in this work. The proposed lighting unit mainly consists of a spherical reflector and a primary packaging lens that contains an aspheric surface and a spherical surface. The light rays emitted from the LED light source are well controlled by the spherical reflector and the aspheric surface of the lens for the purpose of obtaining a uniform illumination on the target surface. Both the ideal Lambertian LED and non-Lambertian LED light sources were employed to validate the proposed structure and the performance of the designed lighting units was analyzed by optical simulation. The results show that the light utilization efficiencies and the estimated uniformities are 92.96% and 91.11% for ideal Lambertian LED-based lighting unit and 93.31% and 91.64% for non-Lambertian LED-based lighting unit, respectively. Further analysis shows that the tolerances of horizontal, vertical, and rotational deviation of the both lighting units were about 2.0 mm, 1.0 mm, and 1.0°, respectively.","PeriodicalId":7352,"journal":{"name":"Advances in Optoelectronics","volume":"1 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2018-10-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1155/2018/7138592","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"64735981","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Raman amplifier is an open area of research in telecommunication field. This paper discusses the performance of 64 channels of 10 Gbps WDM systems with backward multipump Raman amplifier. The main goal of this paper is the optimization of Raman amplifier to minimize its gain variation without using any gain flattening techniques. To increase the transmission capacity of DWDM system, Raman amplifier with backward multipump configuration is implemented. The optimized parameters such as pump power and frequencies are used to deliver both ground and excited state absorption for amplification in S+C and C+L band region. The pump power and frequencies are optimized through multitarget and multiparameter optimization tool available in OptiSystem software. Gain ripple was achieved <0.5 dB for this simulation setup. The maximum flat gain achieved is 8.6 dB and noise figure of <8 dB was achieved for this wide bandwidth without using gain flattening techniques. This amplifier design will be helpful for CATV applications and telecommunication networks.
{"title":"Performance Analysis of Flat Gain Wideband Raman Amplifier for S+C and C+L Band DWDM System","authors":"Dipika D. Pradhan, A. Mandloi","doi":"10.1155/2018/5703805","DOIUrl":"https://doi.org/10.1155/2018/5703805","url":null,"abstract":"Raman amplifier is an open area of research in telecommunication field. This paper discusses the performance of 64 channels of 10 Gbps WDM systems with backward multipump Raman amplifier. The main goal of this paper is the optimization of Raman amplifier to minimize its gain variation without using any gain flattening techniques. To increase the transmission capacity of DWDM system, Raman amplifier with backward multipump configuration is implemented. The optimized parameters such as pump power and frequencies are used to deliver both ground and excited state absorption for amplification in S+C and C+L band region. The pump power and frequencies are optimized through multitarget and multiparameter optimization tool available in OptiSystem software. Gain ripple was achieved <0.5 dB for this simulation setup. The maximum flat gain achieved is 8.6 dB and noise figure of <8 dB was achieved for this wide bandwidth without using gain flattening techniques. This amplifier design will be helpful for CATV applications and telecommunication networks.","PeriodicalId":7352,"journal":{"name":"Advances in Optoelectronics","volume":" ","pages":""},"PeriodicalIF":0.0,"publicationDate":"2018-08-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1155/2018/5703805","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"45965277","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
J. Strassner, Carina Heisel, Dominic Palm, H. Fouckhardt
Initiated by a task in tunable microoptics, but not limited to this application, a microfluidic droplet array in an upright standing module with 3 × 3 subcells and droplet actuation via electrowetting is presented. Each subcell is filled with a single (of course transparent) water droplet, serving as a movable iris, surrounded by opaque blackened decane. Each subcell measures 1 × 1 mm ² and incorporates 2 × 2 quadratically arranged positions for the droplet. All 3 × 3 droplets are actuated synchronously by electrowetting on dielectric (EWOD). The droplet speed is up to 12 mm/s at 130 V (Vrms) with response times of about 40 ms. Minimum operating voltage is 30 V. Horizontal and vertical movement of the droplets is demonstrated. Furthermore, a minor modification of the subcells allows us to exploit the flattening of each droplet. Hence, the opaque decane fluid sample can cover each water droplet and render each subcell opaque, resulting in switchable irises of constant opening diameter. The concept does not require any mechanically moving parts or external pumps.
{"title":"Microfluidic Droplet Array as Optical Irises Actuated via Electrowetting","authors":"J. Strassner, Carina Heisel, Dominic Palm, H. Fouckhardt","doi":"10.1155/2018/1262947","DOIUrl":"https://doi.org/10.1155/2018/1262947","url":null,"abstract":"Initiated by a task in tunable microoptics, but not limited to this application, a microfluidic droplet array in an upright standing module with 3 × 3 subcells and droplet actuation via electrowetting is presented. Each subcell is filled with a single (of course transparent) water droplet, serving as a movable iris, surrounded by opaque blackened decane. Each subcell measures 1 × 1 mm ² and incorporates 2 × 2 quadratically arranged positions for the droplet. All 3 × 3 droplets are actuated synchronously by electrowetting on dielectric (EWOD). The droplet speed is up to 12 mm/s at 130 V (Vrms) with response times of about 40 ms. Minimum operating voltage is 30 V. Horizontal and vertical movement of the droplets is demonstrated. Furthermore, a minor modification of the subcells allows us to exploit the flattening of each droplet. Hence, the opaque decane fluid sample can cover each water droplet and render each subcell opaque, resulting in switchable irises of constant opening diameter. The concept does not require any mechanically moving parts or external pumps.","PeriodicalId":7352,"journal":{"name":"Advances in Optoelectronics","volume":"2018 1","pages":"1-8"},"PeriodicalIF":0.0,"publicationDate":"2018-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1155/2018/1262947","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"44713318","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Xing Yang, Jiangtao Bian, Zhengxin Liu, Li Shuai, Chao Chen, Song He
A conversion efficiency of 20.23% of heterojunction with intrinsic thin layer (HIT) solar cell on 156 mm × 156 mm metallurgical Si wafer has been obtained. Applying AFORS-HET software simulation, HIT solar cell with metallurgical Si was investigated with regard to impurity concentration, compensation level, and their impacts on cell performance. It is known that a small amount of impurity in metallurgical Si materials is not harmful to solar cell properties.
{"title":"HIT Solar Cells with N-Type Low-Cost Metallurgical Si","authors":"Xing Yang, Jiangtao Bian, Zhengxin Liu, Li Shuai, Chao Chen, Song He","doi":"10.1155/2018/7368175","DOIUrl":"https://doi.org/10.1155/2018/7368175","url":null,"abstract":"A conversion efficiency of 20.23% of heterojunction with intrinsic thin layer (HIT) solar cell on 156 mm × 156 mm metallurgical Si wafer has been obtained. Applying AFORS-HET software simulation, HIT solar cell with metallurgical Si was investigated with regard to impurity concentration, compensation level, and their impacts on cell performance. It is known that a small amount of impurity in metallurgical Si materials is not harmful to solar cell properties.","PeriodicalId":7352,"journal":{"name":"Advances in Optoelectronics","volume":"2018 1","pages":"1-5"},"PeriodicalIF":0.0,"publicationDate":"2018-01-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1155/2018/7368175","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"64736569","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
H. Fouckhardt, A. Kleinschmidt, J. Strassner, Christoph Doering
Previously we focused on fundamental transverse mode selection (TMS#0) of broad area semiconductor lasers (BALs) with two-arm folded integrated resonators for Fourier-optical spatial frequency filtering. The resonator had a round-trip length of 4f, where f is the focal length of the Fourier-transform element (FTE), that is, a cylindrical mirror in-between the orthogonal resonator branches. This 4f set-up can be called “retracted once” due to the reflective filter after 2f; that is, the 2f path was used forwards and backwards. Now the branches are retracted once more resulting in a compact 1f long linear resonator (called “retracted twice”) with a round-trip length of 2f. One facet accommodates the filter, while the other houses the FTE, now incorporating a film-waveguide lens. The BAL facet with the filter represents both the Fourier-transform plane (after 2f, i.e., one round-trip) as well as the image plane (after 4f, two round-trips). Thus filtering is performed even after 4f, not just after 2f. Experimental results reveal good fundamental TMS for pump currents up to 20% above threshold and a one-dimensional beam quality parameter = 1.47. The BALs are made from AlGaInAsSb, but the concept can equally well be employed for BALs of any material system.
{"title":"Fundamental Transverse Mode Selection (TMS#0) of Broad Area Semiconductor Lasers with Integrated Twice-Retracted 4f Set-Up and Film-Waveguide Lens","authors":"H. Fouckhardt, A. Kleinschmidt, J. Strassner, Christoph Doering","doi":"10.1155/2017/5283850","DOIUrl":"https://doi.org/10.1155/2017/5283850","url":null,"abstract":"Previously we focused on fundamental transverse mode selection (TMS#0) of broad area semiconductor lasers (BALs) with two-arm folded integrated resonators for Fourier-optical spatial frequency filtering. The resonator had a round-trip length of 4f, where f is the focal length of the Fourier-transform element (FTE), that is, a cylindrical mirror in-between the orthogonal resonator branches. This 4f set-up can be called “retracted once” due to the reflective filter after 2f; that is, the 2f path was used forwards and backwards. Now the branches are retracted once more resulting in a compact 1f long linear resonator (called “retracted twice”) with a round-trip length of 2f. One facet accommodates the filter, while the other houses the FTE, now incorporating a film-waveguide lens. The BAL facet with the filter represents both the Fourier-transform plane (after 2f, i.e., one round-trip) as well as the image plane (after 4f, two round-trips). Thus filtering is performed even after 4f, not just after 2f. Experimental results reveal good fundamental TMS for pump currents up to 20% above threshold and a one-dimensional beam quality parameter = 1.47. The BALs are made from AlGaInAsSb, but the concept can equally well be employed for BALs of any material system.","PeriodicalId":7352,"journal":{"name":"Advances in Optoelectronics","volume":"2017 1","pages":"1-6"},"PeriodicalIF":0.0,"publicationDate":"2017-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1155/2017/5283850","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"46808742","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In order to solve the problem that the measure precision of coal roof rock strain amount detection using traditional electric sensor is insufficient, a kind of High Sensitive Surface-Pasted Fiber Bragg Grating Strain Sensor based on rock bolting is designed for substitution. Furthermore, a kind of Reference Grating Zero-Strain method based on sensitivity matrix coefficient is proposed for solving FBG strain-temperature cross-sensitivity problem and realizing the better separation relevant to strain and temperature. It is proved that the sensitivity and measurement precision and anti-interference ability of FBG strain sensors are better than traditional electricity class sensors, being able to realize the real-time and online detection for coal roof surrounding rock strain.
{"title":"Method Research of Coal Mine Roof Strain Detection Based on the Fiber Bragg Grating Sensor with Thermodynamic Couple Numerical Condition","authors":"Zhang Jian, Lu Chuan, Dehua Lin","doi":"10.1155/2017/2153409","DOIUrl":"https://doi.org/10.1155/2017/2153409","url":null,"abstract":"In order to solve the problem that the measure precision of coal roof rock strain amount detection using traditional electric sensor is insufficient, a kind of High Sensitive Surface-Pasted Fiber Bragg Grating Strain Sensor based on rock bolting is designed for substitution. Furthermore, a kind of Reference Grating Zero-Strain method based on sensitivity matrix coefficient is proposed for solving FBG strain-temperature cross-sensitivity problem and realizing the better separation relevant to strain and temperature. It is proved that the sensitivity and measurement precision and anti-interference ability of FBG strain sensors are better than traditional electricity class sensors, being able to realize the real-time and online detection for coal roof surrounding rock strain.","PeriodicalId":7352,"journal":{"name":"Advances in Optoelectronics","volume":"2017 1","pages":"1-9"},"PeriodicalIF":0.0,"publicationDate":"2017-08-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1155/2017/2153409","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"47963261","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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