Energy-Aware Low-Power CMOS LNA with Process-Variations Management

IF 1.3 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Active and Passive Electronic Components Pub Date : 2016-02-18 DOI:10.1155/2016/8351406
Jorge L. Gonzalez, R. Moreno, J. C. Cruz, D. Vázquez
{"title":"Energy-Aware Low-Power CMOS LNA with Process-Variations Management","authors":"Jorge L. Gonzalez, R. Moreno, J. C. Cruz, D. Vázquez","doi":"10.1155/2016/8351406","DOIUrl":null,"url":null,"abstract":"A reconfigurable low-noise amplifier (LNA) with digitally controllable gain and power consumption is presented. This architecture allows increasing power consumption only when required, that is, to improve LNA’s radiofrequency performance at extreme communication-channel conditions and/or to counteract the effect of process, voltage, and temperature variations. The proposed design leads to significant power saving when a relaxed operation is acceptable. The LNA is implemented in a 130 nm 1.2 V CMOS technology for a 2.4 GHz IEEE-802.15.4 application. Simulated LNA performance (taking into account the worst cases under process variations) is comparable to recently published works.","PeriodicalId":43355,"journal":{"name":"Active and Passive Electronic Components","volume":"2016 1","pages":"1-10"},"PeriodicalIF":1.3000,"publicationDate":"2016-02-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1155/2016/8351406","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Active and Passive Electronic Components","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1155/2016/8351406","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

Abstract

A reconfigurable low-noise amplifier (LNA) with digitally controllable gain and power consumption is presented. This architecture allows increasing power consumption only when required, that is, to improve LNA’s radiofrequency performance at extreme communication-channel conditions and/or to counteract the effect of process, voltage, and temperature variations. The proposed design leads to significant power saving when a relaxed operation is acceptable. The LNA is implemented in a 130 nm 1.2 V CMOS technology for a 2.4 GHz IEEE-802.15.4 application. Simulated LNA performance (taking into account the worst cases under process variations) is comparable to recently published works.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
具有工艺变化管理的能量感知低功耗CMOS LNA
提出了一种增益和功耗数字可控的可重构低噪声放大器。这种架构只允许在需要时增加功耗,也就是说,在极端通信信道条件下提高LNA的射频性能和/或抵消工艺、电压和温度变化的影响。当可接受放松操作时,所建议的设计可显著节省电力。LNA采用130 nm 1.2 V CMOS技术实现,适用于2.4 GHz IEEE-802.15.4应用。模拟的LNA性能(考虑到过程变化下的最坏情况)与最近发表的作品相当。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
Active and Passive Electronic Components
Active and Passive Electronic Components ENGINEERING, ELECTRICAL & ELECTRONIC-
CiteScore
1.30
自引率
0.00%
发文量
1
审稿时长
13 weeks
期刊介绍: Active and Passive Electronic Components is an international journal devoted to the science and technology of all types of electronic components. The journal publishes experimental and theoretical papers on topics such as transistors, hybrid circuits, integrated circuits, MicroElectroMechanical Systems (MEMS), sensors, high frequency devices and circuits, power devices and circuits, non-volatile memory technologies such as ferroelectric and phase transition memories, and nano electronics devices and circuits.
期刊最新文献
Analysis and Design of High-Energy-Efficiency Amplifiers for Delta-Sigma Modulators An Ameliorated Small-Signal Model Parameter Extraction Method for GaN HEMTs up to 110 GHz with Short-Test Structure A Low Threshold Voltage Ultradynamic Voltage Scaling SRAM Write Assist Technique for High-Speed Applications Performance and Stability Analysis of Built-In Self-Read and Write Assist 10T SRAM Cell A 0.9 V, 8T2R nvSRAM Memory Cell with High Density and Improved Storage/Restoration Time in 28 nm Technology Node
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1