Investigation of the Low-Temperature Behavior of FD-SOI MOSFETs in the Saturation Regime Using and Functions

IF 1.3 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Active and Passive Electronic Components Pub Date : 2014-12-15 DOI:10.1155/2014/782417
A. Karsenty, A. Chelly
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引用次数: 0

Abstract

The saturation regime of two types of fully depleted (FD) SOI MOSFET devices was studied. Ultrathin body (UTB) and gate recessed channel (GRC) devices were fabricated simultaneously on the same silicon wafer through a selective “gate recessed” process. They share the same W/L ratio but have a channel film thickness of 46 nm and 2.2 nm, respectively. Their standard characteristics ( and ) of the devices were measured at room temperature before cooling down to 77 K. Surprisingly, their respective temperature dependence is found to be opposite. In this paper, we focus our comparative analysis on the devices' conduction using a Y-function applied to the saturation domain. The influence of the temperature in this domain is presented for the first time. We point out the limits of the Y-function analysis and show that a new function called Z can be used to extract the series resistance in the saturation regime.
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饱和状态下FD-SOI mosfet低温行为的研究
研究了两种完全耗尽型SOI MOSFET器件的饱和状态。超薄体(UTB)和栅极凹槽(GRC)器件通过选择性的“栅极凹槽”工艺在同一硅片上同时制备。它们具有相同的W/L比,但通道膜厚度分别为46 nm和2.2 nm。在冷却至77 K之前,在室温下测量了器件的标准特性(和)。令人惊讶的是,它们各自的温度依赖性是相反的。在本文中,我们重点对器件的传导进行了比较分析,使用y函数应用于饱和域。本文首次提出了温度对该区域的影响。我们指出了y函数分析的局限性,并表明可以使用一个称为Z的新函数来提取饱和状态下的串联电阻。
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来源期刊
Active and Passive Electronic Components
Active and Passive Electronic Components ENGINEERING, ELECTRICAL & ELECTRONIC-
CiteScore
1.30
自引率
0.00%
发文量
1
审稿时长
13 weeks
期刊介绍: Active and Passive Electronic Components is an international journal devoted to the science and technology of all types of electronic components. The journal publishes experimental and theoretical papers on topics such as transistors, hybrid circuits, integrated circuits, MicroElectroMechanical Systems (MEMS), sensors, high frequency devices and circuits, power devices and circuits, non-volatile memory technologies such as ferroelectric and phase transition memories, and nano electronics devices and circuits.
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