New Realizations of Single OTRA-Based Sinusoidal Oscillators

IF 1.3 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Active and Passive Electronic Components Pub Date : 2014-03-10 DOI:10.1155/2014/938987
Hung-Chun Chien
{"title":"New Realizations of Single OTRA-Based Sinusoidal Oscillators","authors":"Hung-Chun Chien","doi":"10.1155/2014/938987","DOIUrl":null,"url":null,"abstract":"This study proposes three new sinusoidal oscillators based on an operational transresistance amplifier (OTRA). Each of the proposed oscillator circuits consists of one OTRA combined with a few passive components. The first circuit is an OTRA-based minimum RC oscillator. The second circuit is capable of providing independent control on the condition of oscillation without affecting the oscillation frequency. The third circuit exhibits independent control of oscillation frequency through a capacitor. This study first introduces the OTRA and the related formulations of the proposed oscillator circuits, and then discusses the nonideal effects, sensitivity analyses, and frequency stability of the presented circuits. The proposed oscillators exhibit low sensitivities and good frequency stability. Because the presented circuits feature low impedance output, they can be connected directly to the next stage without cascading additional voltage buffers. HSPICE simulations and experimental results confirm the feasibility of the new oscillator circuits.","PeriodicalId":43355,"journal":{"name":"Active and Passive Electronic Components","volume":"2014 1","pages":"1-12"},"PeriodicalIF":1.3000,"publicationDate":"2014-03-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1155/2014/938987","citationCount":"21","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Active and Passive Electronic Components","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1155/2014/938987","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 21

Abstract

This study proposes three new sinusoidal oscillators based on an operational transresistance amplifier (OTRA). Each of the proposed oscillator circuits consists of one OTRA combined with a few passive components. The first circuit is an OTRA-based minimum RC oscillator. The second circuit is capable of providing independent control on the condition of oscillation without affecting the oscillation frequency. The third circuit exhibits independent control of oscillation frequency through a capacitor. This study first introduces the OTRA and the related formulations of the proposed oscillator circuits, and then discusses the nonideal effects, sensitivity analyses, and frequency stability of the presented circuits. The proposed oscillators exhibit low sensitivities and good frequency stability. Because the presented circuits feature low impedance output, they can be connected directly to the next stage without cascading additional voltage buffers. HSPICE simulations and experimental results confirm the feasibility of the new oscillator circuits.
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基于单otra的正弦振荡器的新实现
本文提出了三种基于运算跨阻放大器(OTRA)的新型正弦振荡器。所提出的每个振荡器电路由一个OTRA和几个无源元件组成。第一个电路是基于otra的最小RC振荡器。第二电路能够在不影响振荡频率的情况下对振荡条件提供独立控制。第三个电路通过电容显示振荡频率的独立控制。本研究首先介绍了OTRA和所提振荡器电路的相关公式,然后讨论了所提电路的非理想效应、灵敏度分析和频率稳定性。该振荡器具有低灵敏度和良好的频率稳定性。由于所提出的电路具有低阻抗输出,它们可以直接连接到下一级,而无需级联额外的电压缓冲器。HSPICE仿真和实验结果证实了该振荡器电路的可行性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Active and Passive Electronic Components
Active and Passive Electronic Components ENGINEERING, ELECTRICAL & ELECTRONIC-
CiteScore
1.30
自引率
0.00%
发文量
1
审稿时长
13 weeks
期刊介绍: Active and Passive Electronic Components is an international journal devoted to the science and technology of all types of electronic components. The journal publishes experimental and theoretical papers on topics such as transistors, hybrid circuits, integrated circuits, MicroElectroMechanical Systems (MEMS), sensors, high frequency devices and circuits, power devices and circuits, non-volatile memory technologies such as ferroelectric and phase transition memories, and nano electronics devices and circuits.
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