On the Nature of Bi in Molten Bi-BiI3 Mixtures and In in Molten In-InI3 Mixtures

K. Ichikawa
{"title":"On the Nature of Bi in Molten Bi-BiI3 Mixtures and In in Molten In-InI3 Mixtures","authors":"K. Ichikawa","doi":"10.1143/PTPS.72.156","DOIUrl":null,"url":null,"abstract":"The nature of Bi in molten Bi-Biia mixtures and In in molten In-Inia mixtures is surveyed on the basis of static properties and macroscopic transport coefficient (phase diagram and d.c. conductivity). It is shown that information at the microscopic level due to techniques of pulsed neutron scattering, Raman scattering and NMR can account for their nature. From pulsed neutron scattering data preferred Bi-Bi pair-correlation or polybismuth species is proposed for Bi..It-z melts even at the I-rich side below about 40 at% Bi. The localized electronic states around the Fermi level may be established and conduction takes place via hopping of electrons from one trapping site to another for these solutions. The strong concentrationdependence of the first peak distance, which is related to preferred Bi-Bi distance and observed over the range of 0.4<x<0.6, means substantial change of the structural and bonding pattern in polybismuth clusters. Since delocalization of valence electrons concerns the chemical bonding in these clusters consisting of Bi, the continuous MNM transition as well as microscopic inhomogeneity can be observed over the range of 0.4<x<0.6. For Inzit-z melts there exist two distinct valence-states In• and In\"+, over the range of 0.25:s;;x:s;;0.5. The existence of two stable ionic-states causes short-range order associated with ionic or unlike configuration and thus these solutions are of conduction-electron deficient insulator.","PeriodicalId":20614,"journal":{"name":"Progress of Theoretical Physics Supplement","volume":"72 1","pages":"156-168"},"PeriodicalIF":0.0000,"publicationDate":"2013-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Progress of Theoretical Physics Supplement","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1143/PTPS.72.156","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

Abstract

The nature of Bi in molten Bi-Biia mixtures and In in molten In-Inia mixtures is surveyed on the basis of static properties and macroscopic transport coefficient (phase diagram and d.c. conductivity). It is shown that information at the microscopic level due to techniques of pulsed neutron scattering, Raman scattering and NMR can account for their nature. From pulsed neutron scattering data preferred Bi-Bi pair-correlation or polybismuth species is proposed for Bi..It-z melts even at the I-rich side below about 40 at% Bi. The localized electronic states around the Fermi level may be established and conduction takes place via hopping of electrons from one trapping site to another for these solutions. The strong concentrationdependence of the first peak distance, which is related to preferred Bi-Bi distance and observed over the range of 0.4
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
熔融Bi- bii3混合物中的Bi和熔融in - ini3混合物中的in的性质
根据静态性质和宏观输运系数(相图和直流电导率)考察了熔融Bi- biia混合物中的Bi和熔融in - inia混合物中的in的性质。结果表明,脉冲中子散射、拉曼散射和核磁共振技术在微观水平上的信息可以解释它们的性质。根据脉冲中子散射数据,提出了优选Bi-Bi对相关或多铋物质。在% Bi下,它-z甚至在富i的一侧熔化。在这些溶液中,可以建立费米能级附近的局域电子态,并通过电子从一个捕获点跳到另一个捕获点来发生传导。在0.4
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1