{"title":"Optical properties of hydrogenated ZnO-Ga thin films studied by spectroscopic ellipsometry","authors":"Y. Jiao, Gao Mei-zhen","doi":"10.11972/j.issn.1001-9014.2016.01.002","DOIUrl":null,"url":null,"abstract":"The effects of Ga doping on structural, electrical, and optical properties of hydrogenated ZnO-Ga (GZO) thin films deposited by sol-gel technique have been investigated. From the X-ray diffraction observations, the films doped with different gallium concentrations were found to be pure wurtzite-structured ZnO. The electrical properties of the hydrogen -annealed films were improved and a lowest resistivity of 3. 410 x 10(-3) Omega.cm was obtained. The refractive index and extinction coefficient of ZnO-Ga thin films were determined in the range of 270 1600 nm by varying angle spectroscopic ellipsometry (VASE). The simulation was carried out using a double oscillator model, which includes the Psemi-MO equation and the rho-tau Drude equation.","PeriodicalId":50181,"journal":{"name":"红外与毫米波学报","volume":"35 1","pages":""},"PeriodicalIF":0.6000,"publicationDate":"2016-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"红外与毫米波学报","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.11972/j.issn.1001-9014.2016.01.002","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"OPTICS","Score":null,"Total":0}
引用次数: 0
Abstract
The effects of Ga doping on structural, electrical, and optical properties of hydrogenated ZnO-Ga (GZO) thin films deposited by sol-gel technique have been investigated. From the X-ray diffraction observations, the films doped with different gallium concentrations were found to be pure wurtzite-structured ZnO. The electrical properties of the hydrogen -annealed films were improved and a lowest resistivity of 3. 410 x 10(-3) Omega.cm was obtained. The refractive index and extinction coefficient of ZnO-Ga thin films were determined in the range of 270 1600 nm by varying angle spectroscopic ellipsometry (VASE). The simulation was carried out using a double oscillator model, which includes the Psemi-MO equation and the rho-tau Drude equation.
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