Electromagnetic Behavior of Cu and Ni Nanofilms in the X-band

Abstract

Currently, the presence of spurious microwave radiation is increasing in the environment, which has caused concern due to possible health problems in living beings and electromagnetic interference in electronic systems. To control this problem, studies in the materials area are taking place, aiming to attenuate the spurious radiation and meet requirements of good performance in broadband, low cost and low weight. The present work aimed to study Cu and Ni nanometric films with thicknesses of 65 and 200 nm, deposited on polyethylene terephthalate substrate by magnetron sputtering. Scanning electron microscopy with a field emission gun (FEG-SEM) showed that the films produced have different morphological textures, due to the parameters used in the sputtering process and also the free energy of metals. Impedance spectroscopy measurements showed that the films have low conductivity values, due to the metallic oxides formed on the film surfaces, confirmed by X-ray diffraction, and also to the presence of defects. Electromagnetic characterization (8.2 – 12.4 GHz) showed that the Cu and Ni thin films had low performance, except the Ni_200 nm film, which showed a total shielding efficiency of about 30% in broadband. This result is promising considering the nanometric thickness of the Ni film.