{"title":"Integration of Novel High-Frequency Transformer With Silicon-Carbide Schottky Diodes","authors":"Weichong Yao;Junwei Lu;Andrew Seagar;Feifei Bai;Foad Taghizadeh","doi":"10.1109/LMAG.2022.3229230","DOIUrl":null,"url":null,"abstract":"This letter presents a novel and compact structure that integrates silicon-carbide (SiC) Schottky diodes within a high-frequency transformer (HFT). The proposed structure would reduce the volume of a power converter and, in turn, the system to which it is applied. It would also greatly reduce the leakage inductances of an HFT as well as the inductive electromagnetic interference to surrounding components and devices. A prototype HFT shaped much like a torus is designed for integration with SiC Schottky diodes. The three-dimensional finite-element method simulation technique is used to design and analyze the magnetic structure of the HFT including the space reserved for the SiC Schottky diodes. Experimental results are presented for both the HFT as a separate component and as a system integrated with SiC Schottky diodes.","PeriodicalId":1,"journal":{"name":"Accounts of Chemical Research","volume":null,"pages":null},"PeriodicalIF":16.4000,"publicationDate":"2022-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Accounts of Chemical Research","FirstCategoryId":"101","ListUrlMain":"https://ieeexplore.ieee.org/document/9984833/","RegionNum":1,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CHEMISTRY, MULTIDISCIPLINARY","Score":null,"Total":0}
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Abstract
This letter presents a novel and compact structure that integrates silicon-carbide (SiC) Schottky diodes within a high-frequency transformer (HFT). The proposed structure would reduce the volume of a power converter and, in turn, the system to which it is applied. It would also greatly reduce the leakage inductances of an HFT as well as the inductive electromagnetic interference to surrounding components and devices. A prototype HFT shaped much like a torus is designed for integration with SiC Schottky diodes. The three-dimensional finite-element method simulation technique is used to design and analyze the magnetic structure of the HFT including the space reserved for the SiC Schottky diodes. Experimental results are presented for both the HFT as a separate component and as a system integrated with SiC Schottky diodes.
期刊介绍：
Accounts of Chemical Research presents short, concise and critical articles offering easy-to-read overviews of basic research and applications in all areas of chemistry and biochemistry. These short reviews focus on research from the author’s own laboratory and are designed to teach the reader about a research project. In addition, Accounts of Chemical Research publishes commentaries that give an informed opinion on a current research problem. Special Issues online are devoted to a single topic of unusual activity and significance.
Accounts of Chemical Research replaces the traditional article abstract with an article "Conspectus." These entries synopsize the research affording the reader a closer look at the content and significance of an article. Through this provision of a more detailed description of the article contents, the Conspectus enhances the article's discoverability by search engines and the exposure for the research.
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