A Fetal-Movement Circuit Harvesting High-Energy Plasma During Fabrication, Concept, and Its Application to Self-Programming PUF

IF 2.2 Q3 COMPUTER SCIENCE, HARDWARE & ARCHITECTURE IEEE Solid-State Circuits Letters Pub Date : 2023-09-12 DOI:10.1109/LSSC.2023.3313966
Kotaro Naruse;Takayuki Ueda;Jun Shiomi;Yoshihiro Midoh;Noriyuki Miura
{"title":"A Fetal-Movement Circuit Harvesting High-Energy Plasma During Fabrication, Concept, and Its Application to Self-Programming PUF","authors":"Kotaro Naruse;Takayuki Ueda;Jun Shiomi;Yoshihiro Midoh;Noriyuki Miura","doi":"10.1109/LSSC.2023.3313966","DOIUrl":null,"url":null,"abstract":"This letter presents a concept of a circuit harvesting high-energy plasma and operating during its semiconductor fabrication process, namely, fetal-movement circuit (FMC). The plasma current collection antenna is designed to be a comb shape for area saving. This enables the FMC related circuits to be placed within a dicing street for suppressing its area penalty to be almost zero. A self-programming oxide-breakdown physically unclonable function (PUF) has been implemented as one of the FMC applications. The successful PUF programming operation during fabrication has been demonstrated.","PeriodicalId":13032,"journal":{"name":"IEEE Solid-State Circuits Letters","volume":null,"pages":null},"PeriodicalIF":2.2000,"publicationDate":"2023-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/iel7/8011414/10016898/10247264.pdf","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Solid-State Circuits Letters","FirstCategoryId":"1085","ListUrlMain":"https://ieeexplore.ieee.org/document/10247264/","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"COMPUTER SCIENCE, HARDWARE & ARCHITECTURE","Score":null,"Total":0}
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Abstract

This letter presents a concept of a circuit harvesting high-energy plasma and operating during its semiconductor fabrication process, namely, fetal-movement circuit (FMC). The plasma current collection antenna is designed to be a comb shape for area saving. This enables the FMC related circuits to be placed within a dicing street for suppressing its area penalty to be almost zero. A self-programming oxide-breakdown physically unclonable function (PUF) has been implemented as one of the FMC applications. The successful PUF programming operation during fabrication has been demonstrated.
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一种在制作过程中采集高能等离子体的胎儿运动电路,概念及其在PUF自编程中的应用
这封信提出了一个收集高能等离子体并在其半导体制造过程中运行的电路的概念,即胎动电路(FMC)。为了节省面积,等离子体电流收集天线被设计为梳状。这使得FMC相关电路能够被放置在划片道内,以将其面积惩罚抑制为几乎为零。自编程氧化物击穿物理不可克隆功能(PUF)已被实现为FMC应用之一。已经证明了在制造过程中成功的PUF编程操作。
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来源期刊
IEEE Solid-State Circuits Letters
IEEE Solid-State Circuits Letters Engineering-Electrical and Electronic Engineering
CiteScore
4.30
自引率
3.70%
发文量
52
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