The Silicon:Colloidal Quantum Dot Heterojunction

IF 27.4 1区 材料科学 Q1 CHEMISTRY, MULTIDISCIPLINARY Advanced Materials Pub Date : 2015-10-13 DOI:10.1002/adma.201503212
Silvia Masala, Valerio Adinolfi, Jon-Paul Sun, Silvano Del Gobbo, Oleksandr Voznyy, Illan J. Kramer, Ian G. Hill, Edward H. Sargent
{"title":"The Silicon:Colloidal Quantum Dot Heterojunction","authors":"Silvia Masala,&nbsp;Valerio Adinolfi,&nbsp;Jon-Paul Sun,&nbsp;Silvano Del Gobbo,&nbsp;Oleksandr Voznyy,&nbsp;Illan J. Kramer,&nbsp;Ian G. Hill,&nbsp;Edward H. Sargent","doi":"10.1002/adma.201503212","DOIUrl":null,"url":null,"abstract":"<p><b>A heterojunction between crystalline silicon and colloidal quantum dots</b> (CQDs) is realized. A special interface modification is developed to overcome an inherent energetic band mismatch between the two semiconductors, and realize the efficient collection of infrared photocarriers generated in the CQD film. This junction is used to produce a sensitive near infrared photodetector.\n\n <figure>\n <div><picture>\n <source></source></picture><p></p>\n </div>\n </figure>\n </p>","PeriodicalId":114,"journal":{"name":"Advanced Materials","volume":"27 45","pages":"7445-7450"},"PeriodicalIF":27.4000,"publicationDate":"2015-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1002/adma.201503212","citationCount":"51","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advanced Materials","FirstCategoryId":"88","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1002/adma.201503212","RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CHEMISTRY, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 51

Abstract

A heterojunction between crystalline silicon and colloidal quantum dots (CQDs) is realized. A special interface modification is developed to overcome an inherent energetic band mismatch between the two semiconductors, and realize the efficient collection of infrared photocarriers generated in the CQD film. This junction is used to produce a sensitive near infrared photodetector.

Abstract Image

查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
硅:胶体量子点异质结
实现了晶体硅与胶体量子点(CQDs)之间的异质结。为了克服两种半导体之间固有的能带不匹配,开发了一种特殊的界面修饰,实现了对CQD薄膜中产生的红外光载流子的有效收集。这个结被用来制造一个灵敏的近红外光电探测器。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
Advanced Materials
Advanced Materials 工程技术-材料科学:综合
CiteScore
43.00
自引率
4.10%
发文量
2182
审稿时长
2 months
期刊介绍: Advanced Materials, one of the world's most prestigious journals and the foundation of the Advanced portfolio, is the home of choice for best-in-class materials science for more than 30 years. Following this fast-growing and interdisciplinary field, we are considering and publishing the most important discoveries on any and all materials from materials scientists, chemists, physicists, engineers as well as health and life scientists and bringing you the latest results and trends in modern materials-related research every week.
期刊最新文献
Guided and Space Waves Multiplexed Metasurface for Advanced Electromagnetic Functionalities in Microwave Region Machine Learning in Solid-State Hydrogen Storage Materials: Challenges and Perspectives Expandable Fast Li-Ion Diffusion Network of Li-Rich Mn-Based Oxides via Single-Layer LiCo(Ni)O2 Segregation Large Scale Synthesis of Red-Emitting Quantum Dots for Efficient and Stable Light-Emitting Diodes Decoupling the Effects of Interface Chemical Degradation and Mechanical Cracking in Solid-State Batteries with Silicon Electrode
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1