The influence of La content on photovoltaic effect of PZT thin films

IF 0.6 4区 物理与天体物理 Q4 OPTICS 红外与毫米波学报 Pub Date : 2013-01-01 DOI:10.3724/sp.j.1010.2013.00128
Deng Hong
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引用次数: 0

Abstract

The polycrystalline thin films of(Pb1-xLax)(Zr0.52Ti0.48)1-x/4O3(PLZT) were fabricated on LNO/Si substrates by sol-gel method.X-ray diffraction showed that PLZT thin films in rhombohedral-tetragonal phase with a preferential(110) orientation can be obtained after a rapid thermal annealing process at 600 ℃.This is further confirmed by Raman spectrum.With the decrease of La content,hysteresis loops of the thin films gradually broaden.Measurement of the photovoltaic effect in the films shows that photovoltage increases gradually with the increase of the content of La from 1% to 6%.It reaches a maximum there and then decreases when the La content is increased furthermore.
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La含量对PZT薄膜光伏效应的影响
采用溶胶-凝胶法制备了(Pb1-xLax)(Zr0.52Ti0.48)1-x/4O3(PLZT)多晶薄膜。x射线衍射结果表明,在600℃下快速热处理后,可获得优先取向(110)的菱形-四方相PLZT薄膜。拉曼光谱进一步证实了这一点。随着La含量的降低,薄膜的磁滞回线逐渐变宽。对薄膜中的光伏效应的测量表明,随着La含量从1%增加到6%,光电压逐渐增加。随着La含量的进一步增加,它在那里达到最大值,然后逐渐减小。
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来源期刊
CiteScore
1.20
自引率
14.30%
发文量
4258
审稿时长
2.9 months
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