{"title":"Cooling Geometry Dependent Operation Properties in a Diode End-Pumped Monolithic Yb:YAG Laser","authors":"H. Moon, C. Lim","doi":"10.3807/JOSK.2016.20.5.593","DOIUrl":null,"url":null,"abstract":"Operation properties, such as output power, beam radius, and crystal temperature rise were investigated in a diode-pumped edge-cooled monolithic Yb:YAG laser with ~ 4 W pumping level. The output power showed saturation behavior because of severe temperature rise and poor spatial overlapping between pump beam and lasing mode. Face cooling geometry by using a sapphire plate was also investigated. No apparent saturation behavior in output power was observed due to the reduced temperature rise, which could be attributed to efficient heat removal through the crystal-sapphire interface.","PeriodicalId":49986,"journal":{"name":"Journal of the Optical Society of Korea","volume":"20 1","pages":"593-600"},"PeriodicalIF":0.0000,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of the Optical Society of Korea","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.3807/JOSK.2016.20.5.593","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q","JCRName":"Physics and Astronomy","Score":null,"Total":0}
引用次数: 0
Abstract
Operation properties, such as output power, beam radius, and crystal temperature rise were investigated in a diode-pumped edge-cooled monolithic Yb:YAG laser with ~ 4 W pumping level. The output power showed saturation behavior because of severe temperature rise and poor spatial overlapping between pump beam and lasing mode. Face cooling geometry by using a sapphire plate was also investigated. No apparent saturation behavior in output power was observed due to the reduced temperature rise, which could be attributed to efficient heat removal through the crystal-sapphire interface.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
