Two-Dimensional Finite Element Method Analysis Effect of the Recombination Velocity at the Grain Boundaries on the Characteristics of a Polycrystalline Silicon Solar Cell

Abstract

To take into account the variation of the recombination velocity at the grain boundaries, we present in this paper a new approach of characterization of the solar cells, based on the two dimensional finite element method. The results of this study on a bifacial polycrystalline silicon solar cell, modelled in the rectangular form, highlighting the effects of the boundary recombination velocity (Sgb) on the solar cell electrical parameters. The photogenerated excess carrier’s density, the photocurrent density; the phototovoltage and the current-voltage characteristics are analyzed, namely. A good agreement with the results given in the literature is observed.