Qin Zhang, Pei Chen, Qin Liu, He Huang, Xiaoyang Ma, Tingting Song, Jiehong Lei
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引用次数: 0
Abstract
Van der Waals heterostructures have a wide range of applications in the semiconductor industry. Based on the superior properties of C3N and WSe2 monolayers, the stability and electronic properties of C3N/WSe2 vdW heterostructure under strain and external electric field are studied using density functional theory. The results show that the C3N/WSe2 vdW heterostructure has a type-I band alignment and possesses a direct band gap of 0.397 eV. Furthermore, the electric field and biaxial strain not only modulate the C3N/WSe2 band gap, but also induce band alignment (type I to type II) and a direct gap to an indirect gap transition, even undergoing semiconductor-to-metal transition. These results suggest that tunable electronic properties of C3N/WSe2 heterostructure has the potential to be applied in semiconductor devices, especially optoelectronic devices.
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The aims of this peer-reviewed online journal are to distribute and archive all relevant material required to document, assess, validate and reconstruct in detail the body of knowledge in the physical and related sciences.
The scope of EPJ Plus encompasses a broad landscape of fields and disciplines in the physical and related sciences - such as covered by the topical EPJ journals and with the explicit addition of geophysics, astrophysics, general relativity and cosmology, mathematical and quantum physics, classical and fluid mechanics, accelerator and medical physics, as well as physics techniques applied to any other topics, including energy, environment and cultural heritage.
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