Optimization of CdS-free non-toxic electron transport layer for Sb2S3-based solar cell with notable enhanced performance

IF 2.2 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Computational Electronics Pub Date : 2023-10-20 DOI:10.1007/s10825-023-02106-9

Sameen Maqsood, Zohaib Ali, Khuram Ali, Rimsha Bashir Awan, Yusra Arooj, Ayesha Younus

{"title":"Optimization of CdS-free non-toxic electron transport layer for Sb2S3-based solar cell with notable enhanced performance","authors":"Sameen Maqsood, Zohaib Ali, Khuram Ali, Rimsha Bashir Awan, Yusra Arooj, Ayesha Younus","doi":"10.1007/s10825-023-02106-9","DOIUrl":null,"url":null,"abstract":"<div>In this investigation, we develop CdS-free non-toxic thin-film solar cell structure with antimony sulfide (Sb2S3) as an absorber material. Sb2S3 has found to be a promising candidate for production of renewable energy. Solar cells based on Sb2S3 have been attracted worldwide attraction due to their outstanding efficiency and low cost. To serve as an optimistic buffer layer, 3C-SiC (cubic silicon carbide) is used thanks to its suitable bandgap to replace toxic cadmium sulfide (CdS). SCAPS-1D (one-dimensional solar cell capacitance simulator) software has been employed to numerically investigate the performance of Sb2S3-based n-ZnO/n-3C-SiC/p-Sb2S3 heterostructure solar cells. The influence of absorber/buffer layer thickness, acceptor/donor densities, and defect density on device working have been investigated. Consequently, the role of defects in p-Sb2S3 along with the significance of n-3C-SiC/p-Sb2S3 interface defects has been studied to provide recommendations for achieving high efficiency. The proposed structure provides the enhanced efficiency of 17% under 1.5 G illumination spectrum. The parameters regarding solar cell performance such as Voc, Jsc, FF, QE and η have been studied graphically. This novel structure may have considerable influence on progress of improved photovoltaic devices in future.</div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":null,"pages":null},"PeriodicalIF":2.2000,"publicationDate":"2023-10-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Computational Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10825-023-02106-9","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

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Abstract

In this investigation, we develop CdS-free non-toxic thin-film solar cell structure with antimony sulfide (Sb₂S₃) as an absorber material. Sb₂S₃ has found to be a promising candidate for production of renewable energy. Solar cells based on Sb₂S₃ have been attracted worldwide attraction due to their outstanding efficiency and low cost. To serve as an optimistic buffer layer, 3C-SiC (cubic silicon carbide) is used thanks to its suitable bandgap to replace toxic cadmium sulfide (CdS). SCAPS-1D (one-dimensional solar cell capacitance simulator) software has been employed to numerically investigate the performance of Sb₂S₃-based n-ZnO/n-3C-SiC/p-Sb₂S₃ heterostructure solar cells. The influence of absorber/buffer layer thickness, acceptor/donor densities, and defect density on device working have been investigated. Consequently, the role of defects in p-Sb₂S₃ along with the significance of n-3C-SiC/p-Sb₂S₃ interface defects has been studied to provide recommendations for achieving high efficiency. The proposed structure provides the enhanced efficiency of 17% under 1.5 G illumination spectrum. The parameters regarding solar cell performance such as V_oc, J_sc, FF, QE and η have been studied graphically. This novel structure may have considerable influence on progress of improved photovoltaic devices in future.

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性能显著提高的Sb2S3基太阳能电池无CdS无毒电子传输层的优化

在本研究中，我们开发了以硫化锑（Sb2S3）为吸收材料的无硫化镉无毒薄膜太阳能电池结构。Sb2S3已被发现是生产可再生能源的一种有前景的候选者。基于Sb2S3的太阳能电池由于其卓越的效率和低成本而受到世界各地的关注。为了作为一种理想的缓冲层，3C-SiC（立方碳化硅）因其合适的带隙而被用来取代有毒的硫化镉（CdS）。采用SCAPS-1D（一维太阳能电池电容模拟器）软件对基于Sb2S3的n-ZnO/n-3C-SiC/p-Sb2S3异质结构太阳能电池的性能进行了数值研究。研究了吸收/缓冲层厚度、受主/施主密度和缺陷密度对器件工作的影响。因此，已经研究了缺陷在p-Sb2S3中的作用以及n-3C-SiC/p-Sb2S3界面缺陷的重要性，以提供实现高效率的建议。所提出的结构在1.5G照明光谱下提供了17%的增强效率。对Voc、Jsc、FF、QE和η等太阳能电池性能参数进行了图形化研究。这种新型结构可能对未来改进光伏器件的进展产生相当大的影响。

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来源期刊

Journal of Computational Electronics ENGINEERING, ELECTRICAL & ELECTRONIC-PHYSICS, APPLIED

CiteScore

4.50

自引率

4.80%

发文量

142

审稿时长

>12 weeks

期刊介绍： he Journal of Computational Electronics brings together research on all aspects of modeling and simulation of modern electronics. This includes optical, electronic, mechanical, and quantum mechanical aspects, as well as research on the underlying mathematical algorithms and computational details. The related areas of energy conversion/storage and of molecular and biological systems, in which the thrust is on the charge transport, electronic, mechanical, and optical properties, are also covered. In particular, we encourage manuscripts dealing with device simulation; with optical and optoelectronic systems and photonics; with energy storage (e.g. batteries, fuel cells) and harvesting (e.g. photovoltaic), with simulation of circuits, VLSI layout, logic and architecture (based on, for example, CMOS devices, quantum-cellular automata, QBITs, or single-electron transistors); with electromagnetic simulations (such as microwave electronics and components); or with molecular and biological systems. However, in all these cases, the submitted manuscripts should explicitly address the electronic properties of the relevant systems, materials, or devices and/or present novel contributions to the physical models, computational strategies, or numerical algorithms.