Characteristic performance and analysis of the positional variation of the charge generation layer to enhance the performance of OLEDs

IF 2.2 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Computational Electronics Pub Date : 2023-10-24 DOI:10.1007/s10825-023-02100-1
Sugandha Yadav, Poornima Mittal, Shubham Negi
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Abstract

In this paper, a highly efficient charge generation layer (CGL)-based blue organic light-emitting diode is proposed. The proposed device contains a CGL composed of two materials, 1,1-bis[(di-4-tolyamino)phenyl]cyclohexane (TAPC) and 1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile (HAT-CN), which act as hole and electron injectors, respectively. The CGL in the proposed device is placed outside the emissive layer, which provides better luminescence and current as compared with four other CGL-based devices D2, D3, D4 and D5 where CGL is utilized below the cathode, above the anode, near both electrodes (cathode and anode) and inside the emissive layer, respectively. The proposed device exhibits noteworthy results, achieving peak current and luminescence values of 0.44 A and 3636.3 cd/m2, respectively. The luminescence obtained is improved by about 16.8, 2.3, 1.7, 3, and 1.6 times compared with D1, D2, D3, D4 and D5. Thickness optimization of the proposed device is also outlined. The optimized device shows maximum luminescence of 4670 cd/m2.

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提高OLED性能的电荷产生层的特性性能和位置变化分析
本文提出了一种基于高效电荷产生层(CGL)的蓝色有机发光二极管。所提出的装置包含由两种材料组成的CGL,1,1-双[(二-4-甲苯氨基)苯基]环己烷(TAPC)和1,4,5,8,9,11-六氮杂三苯基-六腈(HAT-CN),它们分别用作空穴和电子注入器。所提出的器件中的CGL被放置在发射层之外,与其他四个基于CGL的器件D2、D3、D4和D5相比,这提供了更好的发光和电流,其中CGL分别被利用在阴极下方、阳极上方、两个电极(阴极和阳极)附近和发射层内部。所提出的器件显示出显著的结果,分别获得0.44A和3636.3cd/m2的峰值电流和发光值。与D1、D2、D3、D4和D5相比,所获得的发光提高了约16.8、2.3、1.7、3和1.6倍。还概述了所提出的器件的厚度优化。优化后的器件显示出4670 cd/m2的最大发光量。
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来源期刊
Journal of Computational Electronics
Journal of Computational Electronics ENGINEERING, ELECTRICAL & ELECTRONIC-PHYSICS, APPLIED
CiteScore
4.50
自引率
4.80%
发文量
142
审稿时长
>12 weeks
期刊介绍: he Journal of Computational Electronics brings together research on all aspects of modeling and simulation of modern electronics. This includes optical, electronic, mechanical, and quantum mechanical aspects, as well as research on the underlying mathematical algorithms and computational details. The related areas of energy conversion/storage and of molecular and biological systems, in which the thrust is on the charge transport, electronic, mechanical, and optical properties, are also covered. In particular, we encourage manuscripts dealing with device simulation; with optical and optoelectronic systems and photonics; with energy storage (e.g. batteries, fuel cells) and harvesting (e.g. photovoltaic), with simulation of circuits, VLSI layout, logic and architecture (based on, for example, CMOS devices, quantum-cellular automata, QBITs, or single-electron transistors); with electromagnetic simulations (such as microwave electronics and components); or with molecular and biological systems. However, in all these cases, the submitted manuscripts should explicitly address the electronic properties of the relevant systems, materials, or devices and/or present novel contributions to the physical models, computational strategies, or numerical algorithms.
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