On functional boron nitride: Electronic structures and thermal properties

Jing Cao, Tzee Luai Meng, Xikui Zhang, Chee Kiang Ivan Tan, Ady Suwardi, Hongfei Liu
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引用次数: 6

Abstract

The past two decades have witnessed extensive explorations of boron nitride (BN) largely due to its unique optoelectronic properties, mechanical robustness, high thermal conductivity, thermal and chemical stability. Crystal growth and functional engineering of BN thin film structures as well as their integrations with two-dimensional materials for advanced applications have been attracting increasing interest in recent years. Here, we have reviewed the basic structural, electronic, and thermal transport properties of BN, especially hexagonal BN both in bulk and reduced dimensionalities. This is followed by a thorough account of progress in atomic layer deposition (ALD) of BN, which has the advantages of being able to grow on 3D surface and control the film thickness in atomic level. Future perspectives are provided through discussing the potential applications of BN along with the material synthesis.

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功能氮化硼的电子结构与热性能
在过去的二十年里,氮化硼(BN)因其独特的光电性能、机械坚固性、高导热性、热稳定性和化学稳定性而得到了广泛的探索。近年来,氮化硼薄膜结构的晶体生长和功能工程及其与二维材料的集成在高级应用中越来越引起人们的兴趣。在这里,我们回顾了BN的基本结构、电子和热输运性质,特别是六方体和降维BN。随后,全面介绍了BN的原子层沉积(ALD)的进展,其优点是能够在3D表面上生长并在原子水平上控制膜厚度。通过讨论氮化硼在材料合成中的潜在应用,提供了未来的前景。
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