Channelling analysis of high temperature ion-implanted diamond

Abstract

Channelling techniques are used to study the annealing of implanted diamonds and to determine the final lattice sites the implants occupy. Potential donor ions (Sb, P, Li) and Ge have been implanted into heated (1000–1100°C) natural diamond, and the remaining damage was studied by the RBS channelling technique. It was found that the diamond lattice remains nearly undamaged even after rather high dose implantations (≈ 10¹⁶ cm⁻²), the residual damage probably being due to extended defects. The lattice location of the implants was determined from channelling experiments where for each ion the most suitable signal characterizing a close encounter was chosen (RBS, PIXE and a nuclear reaction). Phosphorus and Ge are found to occupy partly substitutional sites, Li is partly interstitial while Sb is found to be mostly non-substitutional.